Observation of oxide precipitates in InN nanostructures

Soon Yong Kwon; Zaiyuan Ren; Qian Sun; Jung Han; Young Woon Kim; Euijoon Yoon; Bo Hyun Kong; Hyung Koun Cho; Il Joong Kim; Hyeonsik Cheong

doi:10.1063/1.2822396

Observation of oxide precipitates in InN nanostructures

Soon Yong Kwon, Zaiyuan Ren, Qian Sun, Jung Han, Young Woon Kim, Euijoon Yoon, Bo Hyun Kong, Hyung Koun Cho, Il Joong Kim, Hyeonsik Cheong

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We observed the formation of oxide precipitates (bcc- In2 O3) in InN nanostructures formed during metal-organic chemical vapor deposition (MOCVD) and/or subsequent postgrowth procedures in H2 ambient. It was found that InN is extremely unstable in H2 ambient and the activation energy of N2 desorption of InN is measured to be ∼0.28 eV, which is one order of magnitude smaller than that of reported value of InN in vacuum. Instability of InN nanostructures under H2 ambient together with residual oxidant in the reactor facilitates the formation of indium oxide precipitates in the nanostructure matrix during MOCVD or the oxidation of residual indium at the surface, resulting in indium oxide dots.

Original language	English
Article number	234102
Journal	Applied Physics Letters
Volume	91
Issue number	23
DOIs	https://doi.org/10.1063/1.2822396
State	Published - 2007

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@article{b0cabae389cd4378866064a211306935,

title = "Observation of oxide precipitates in InN nanostructures",

abstract = "We observed the formation of oxide precipitates (bcc- In2 O3) in InN nanostructures formed during metal-organic chemical vapor deposition (MOCVD) and/or subsequent postgrowth procedures in H2 ambient. It was found that InN is extremely unstable in H2 ambient and the activation energy of N2 desorption of InN is measured to be ∼0.28 eV, which is one order of magnitude smaller than that of reported value of InN in vacuum. Instability of InN nanostructures under H2 ambient together with residual oxidant in the reactor facilitates the formation of indium oxide precipitates in the nanostructure matrix during MOCVD or the oxidation of residual indium at the surface, resulting in indium oxide dots.",

author = "Kwon, \{Soon Yong\} and Zaiyuan Ren and Qian Sun and Jung Han and Kim, \{Young Woon\} and Euijoon Yoon and Kong, \{Bo Hyun\} and Cho, \{Hyung Koun\} and Kim, \{Il Joong\} and Hyeonsik Cheong",

year = "2007",

doi = "10.1063/1.2822396",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Observation of oxide precipitates in InN nanostructures

AU - Kwon, Soon Yong

AU - Ren, Zaiyuan

AU - Sun, Qian

AU - Han, Jung

AU - Kim, Young Woon

AU - Yoon, Euijoon

AU - Kong, Bo Hyun

AU - Cho, Hyung Koun

AU - Kim, Il Joong

AU - Cheong, Hyeonsik

PY - 2007

Y1 - 2007

N2 - We observed the formation of oxide precipitates (bcc- In2 O3) in InN nanostructures formed during metal-organic chemical vapor deposition (MOCVD) and/or subsequent postgrowth procedures in H2 ambient. It was found that InN is extremely unstable in H2 ambient and the activation energy of N2 desorption of InN is measured to be ∼0.28 eV, which is one order of magnitude smaller than that of reported value of InN in vacuum. Instability of InN nanostructures under H2 ambient together with residual oxidant in the reactor facilitates the formation of indium oxide precipitates in the nanostructure matrix during MOCVD or the oxidation of residual indium at the surface, resulting in indium oxide dots.

AB - We observed the formation of oxide precipitates (bcc- In2 O3) in InN nanostructures formed during metal-organic chemical vapor deposition (MOCVD) and/or subsequent postgrowth procedures in H2 ambient. It was found that InN is extremely unstable in H2 ambient and the activation energy of N2 desorption of InN is measured to be ∼0.28 eV, which is one order of magnitude smaller than that of reported value of InN in vacuum. Instability of InN nanostructures under H2 ambient together with residual oxidant in the reactor facilitates the formation of indium oxide precipitates in the nanostructure matrix during MOCVD or the oxidation of residual indium at the surface, resulting in indium oxide dots.

UR - https://www.scopus.com/pages/publications/36849067839

U2 - 10.1063/1.2822396

DO - 10.1063/1.2822396

M3 - Article

AN - SCOPUS:36849067839

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 234102

ER -

Observation of oxide precipitates in InN nanostructures

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