Skip to main navigation Skip to search Skip to main content

Observation of interface trap reduction in fluoropolymer dielectric organic transistors by low-frequency noise spectroscopy

  • Wonjun Shin
  • , Jihyun Shin
  • , Jong Ho Lee
  • , Hocheon Yoo
  • , Sung Tae Lee
  • Seoul National University
  • Gachon University
  • Ministry of Science and ICT
  • Hongik University

Research output: Contribution to journalArticlepeer-review

Abstract

This study examines the low-frequency noise characteristics of the 2,7-dioctyl[1] benzothieno[3,2-b][1] benzothiophene organic thin-film transistor (OTFT) having a CYTOP dielectric layer. Specifically, the fabricated OTFT exhibits 1/f noise, and its behavior is explained via a carrier number fluctuation model. Additionally, the volume trap density (NT) of the gate dielectric is quantitatively evaluated and compared with its counterpart having SiO2 dielectric layer.

Original languageEnglish
Article number263506
JournalApplied Physics Letters
Volume122
Issue number26
DOIs
StatePublished - 26 Jun 2023
Externally publishedYes

Fingerprint

Dive into the research topics of 'Observation of interface trap reduction in fluoropolymer dielectric organic transistors by low-frequency noise spectroscopy'. Together they form a unique fingerprint.

Cite this