Observation of GeO2 agglomeration in the oxidized polycrystalline-Si1-xGex films by electron beam irradiation

H. B. Kang; J. H. Lee; C. W. Yang

Observation of GeO₂ agglomeration in the oxidized polycrystalline-Si_1-xGe_x films by electron beam irradiation

H. B. Kang, J. H. Lee, C. W. Yang

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to conference › Paper › peer-review

Abstract

We have observed the morphological and compositional changes that occurred in oxidized poly-Si_1-xGe_x film during the electron-beam irradiation in the transmission electron microscope (TEM). Poly-Si_1-xGe_x films with various compositions and about 1000 Å in thickness were deposited on oxidized Si wafers (with 1000 Å thick thermal SiO₂). The oxidations were carried out in a conventional tube furnace at 800°C. Cross sectional samples of oxidized poly-Si_1-xGe_x films were exposed to electron-beam irradiation with kinetic energy of 300keV in the TEM. Before irradiation, the oxide layer was composed of a mixture of SiO₂ and GeO₂ phases. However, during the electron-beam irradiation, significant changes in microstructure and elemental distribution occurred. For the oxidized poly-Si_0.6Ge_0.4 films, the agglomeration of GeO₂ was observed at the surface region. In the case of the oxidized poly-Si_0.4Ge_0.6 films, in contrast, the crystallization of GeO₂ occurred in the oxide layer. Ge lattice fringes and twinning were observed in the oxide layer.

Original language	English
Pages	321-327
Number of pages	7
State	Published - 2003
Event	Electron Microscopy: Its Role in Materials Science - San Diego, CA, United States Duration: 2 Mar 2003 → 6 Mar 2003

Conference

Conference	Electron Microscopy: Its Role in Materials Science
Country/Territory	United States
City	San Diego, CA
Period	2/03/03 → 6/03/03

Cite this

@conference{e5e25e06550e4c588f4c8019c5136651,

title = "Observation of GeO2 agglomeration in the oxidized polycrystalline-Si1-xGex films by electron beam irradiation",

abstract = "We have observed the morphological and compositional changes that occurred in oxidized poly-Si1-xGex film during the electron-beam irradiation in the transmission electron microscope (TEM). Poly-Si1-xGex films with various compositions and about 1000 {\AA} in thickness were deposited on oxidized Si wafers (with 1000 {\AA} thick thermal SiO2). The oxidations were carried out in a conventional tube furnace at 800°C. Cross sectional samples of oxidized poly-Si1-xGex films were exposed to electron-beam irradiation with kinetic energy of 300keV in the TEM. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during the electron-beam irradiation, significant changes in microstructure and elemental distribution occurred. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. In the case of the oxidized poly-Si0.4Ge0.6 films, in contrast, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were observed in the oxide layer.",

author = "Kang, \{H. B.\} and Lee, \{J. H.\} and Yang, \{C. W.\}",

year = "2003",

language = "English",

pages = "321--327",

note = "Electron Microscopy: Its Role in Materials Science ; Conference date: 02-03-2003 Through 06-03-2003",

}

TY - CONF

T1 - Observation of GeO2 agglomeration in the oxidized polycrystalline-Si1-xGex films by electron beam irradiation

AU - Kang, H. B.

AU - Lee, J. H.

AU - Yang, C. W.

PY - 2003

Y1 - 2003

N2 - We have observed the morphological and compositional changes that occurred in oxidized poly-Si1-xGex film during the electron-beam irradiation in the transmission electron microscope (TEM). Poly-Si1-xGex films with various compositions and about 1000 Å in thickness were deposited on oxidized Si wafers (with 1000 Å thick thermal SiO2). The oxidations were carried out in a conventional tube furnace at 800°C. Cross sectional samples of oxidized poly-Si1-xGex films were exposed to electron-beam irradiation with kinetic energy of 300keV in the TEM. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during the electron-beam irradiation, significant changes in microstructure and elemental distribution occurred. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. In the case of the oxidized poly-Si0.4Ge0.6 films, in contrast, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were observed in the oxide layer.

AB - We have observed the morphological and compositional changes that occurred in oxidized poly-Si1-xGex film during the electron-beam irradiation in the transmission electron microscope (TEM). Poly-Si1-xGex films with various compositions and about 1000 Å in thickness were deposited on oxidized Si wafers (with 1000 Å thick thermal SiO2). The oxidations were carried out in a conventional tube furnace at 800°C. Cross sectional samples of oxidized poly-Si1-xGex films were exposed to electron-beam irradiation with kinetic energy of 300keV in the TEM. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during the electron-beam irradiation, significant changes in microstructure and elemental distribution occurred. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. In the case of the oxidized poly-Si0.4Ge0.6 films, in contrast, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were observed in the oxide layer.

UR - https://www.scopus.com/pages/publications/0038072795

M3 - Paper

AN - SCOPUS:0038072795

SP - 321

EP - 327

T2 - Electron Microscopy: Its Role in Materials Science

Y2 - 2 March 2003 through 6 March 2003

ER -

Observation of GeO₂ agglomeration in the oxidized polycrystalline-Si_1-xGe_x films by electron beam irradiation

Abstract

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