Abstract
The organic thin film transistor (OTFT) on flexible substrate electroplated electrodes has many advantages as in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated the mechanical and electrical characteristics of the OTFT with various voltage conditions by using COMSOL. The model consisting of a channel, source and drain was employed to investigate the temperature distribution and thermal stress concentration. The channel length is 40 m and the voltage ranged between -20V and -40V. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. Mechanical properties of the fabricated OTFT were characterized by thermal stress which was predicted with the result of stress distribution.
| Original language | English |
|---|---|
| Pages (from-to) | 1471-1474 |
| Number of pages | 4 |
| Journal | Modern Physics Letters B |
| Volume | 24 |
| Issue number | 13 |
| DOIs | |
| State | Published - 30 May 2010 |
Keywords
- Organic thin film transistor (OTFT)
- Pentacene
- Semiconducting
- Thermal stress
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