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Numerical analysis on the mechanical properties of organic thin film transistor

  • S. C. Lee
  • , D. K. Lee
  • , Y. G. Seol
  • , J. H. Ahn
  • , N. E. Lee
  • , Y. J. Kim
  • Sungkyunkwan University

Research output: Contribution to journalArticlepeer-review

Abstract

The organic thin film transistor (OTFT) on flexible substrate electroplated electrodes has many advantages as in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated the mechanical and electrical characteristics of the OTFT with various voltage conditions by using COMSOL. The model consisting of a channel, source and drain was employed to investigate the temperature distribution and thermal stress concentration. The channel length is 40 m and the voltage ranged between -20V and -40V. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. Mechanical properties of the fabricated OTFT were characterized by thermal stress which was predicted with the result of stress distribution.

Original languageEnglish
Pages (from-to)1471-1474
Number of pages4
JournalModern Physics Letters B
Volume24
Issue number13
DOIs
StatePublished - 30 May 2010

Keywords

  • Organic thin film transistor (OTFT)
  • Pentacene
  • Semiconducting
  • Thermal stress

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