Abstract
We have fabricated the s-Si:H film for pixel region and poly-Si film for driver region on the same glass substrate by a rapid thermal process successfully. By employing the halogen lamp, the considerable amount of hydrogen in the PECVD a-Si:H film, which causes the undesirable film ablation due to hydrogen evolution during excimer laser annealing, could be reduced selectively in the peripheral driver area where the a-Si:H film is recrystallized into poly-Si film in order to obtain the high mobility. After rapid thermal annealing, the hydrogen content in a-Si:H films, of which the inherent hydrogen content was found to be about 10-12 at. %, is successfully reduced to less than 5 at. %. The annealing conditions for dehydrogenation are 500, 550, 600 and 650 °C with various halogen lamp irradiation period which are below the point of the glass shrinkage. It should be noted that after rapid thermal annealing, any physical damage in the glass substrate has not been observed.
| Original language | English |
|---|---|
| Pages (from-to) | 439-443 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 467 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: 1 Apr 1997 → 4 Apr 1997 |
