Novel method for dry etching CH3NH3PbI3 perovskite films utilizing atmospheric-hydrogen-plasma

Hayk Khachatryan; Hyeong Pil Kim; Sung Nam Lee; Han Ki Kim; Moojin Kim; Kyoung Bo Kim; Jin Jang

doi:10.1016/j.mssp.2017.11.019

Novel method for dry etching CH₃NH₃PbI₃ perovskite films utilizing atmospheric-hydrogen-plasma

Hayk Khachatryan, Hyeong Pil Kim, Sung Nam Lee, Han Ki Kim, Moojin Kim, Kyoung Bo Kim, Jin Jang

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Patterning of organic-inorganic hybrid methyl ammonium lead iodide (CH₃NH₃PbI₃) perovskite films by atmospheric hydrogen plasma is explored. It is estimated that among oxygen, nitrogen, and hydrogen plasmas only the hydrogen plasma treatment is capable to etch perovskite film. A rectangular metal mask is placed to a perovskite film to form a mesa structure. The morphology of treated film is dramatically changed from metal mask to outward direction. In the patterned area eight regions are observed possessing different morphologies. The microstructures and compositions of the plasma-processed semiconducting films are analyzed in each region.

Original language	English
Pages (from-to)	1-9
Number of pages	9
Journal	Materials Science in Semiconductor Processing
Volume	75
DOIs	https://doi.org/10.1016/j.mssp.2017.11.019
State	Published - 1 Mar 2018
Externally published	Yes

Keywords

Atmospheric hydrogen plasma
Dry etching
Metal mask
Perovskite thin film

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.mssp.2017.11.019

Cite this

@article{1cb3274aeb894cd3b26be64c8baa9f9c,

title = "Novel method for dry etching CH3NH3PbI3 perovskite films utilizing atmospheric-hydrogen-plasma",

abstract = "Patterning of organic-inorganic hybrid methyl ammonium lead iodide (CH3NH3PbI3) perovskite films by atmospheric hydrogen plasma is explored. It is estimated that among oxygen, nitrogen, and hydrogen plasmas only the hydrogen plasma treatment is capable to etch perovskite film. A rectangular metal mask is placed to a perovskite film to form a mesa structure. The morphology of treated film is dramatically changed from metal mask to outward direction. In the patterned area eight regions are observed possessing different morphologies. The microstructures and compositions of the plasma-processed semiconducting films are analyzed in each region.",

keywords = "Atmospheric hydrogen plasma, Dry etching, Metal mask, Perovskite thin film",

author = "Hayk Khachatryan and Kim, \{Hyeong Pil\} and Lee, \{Sung Nam\} and Kim, \{Han Ki\} and Moojin Kim and Kim, \{Kyoung Bo\} and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2018",

month = mar,

day = "1",

doi = "10.1016/j.mssp.2017.11.019",

language = "English",

volume = "75",

pages = "1--9",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Novel method for dry etching CH3NH3PbI3 perovskite films utilizing atmospheric-hydrogen-plasma

AU - Khachatryan, Hayk

AU - Kim, Hyeong Pil

AU - Lee, Sung Nam

AU - Kim, Han Ki

AU - Kim, Moojin

AU - Kim, Kyoung Bo

AU - Jang, Jin

PY - 2018/3/1

Y1 - 2018/3/1

N2 - Patterning of organic-inorganic hybrid methyl ammonium lead iodide (CH3NH3PbI3) perovskite films by atmospheric hydrogen plasma is explored. It is estimated that among oxygen, nitrogen, and hydrogen plasmas only the hydrogen plasma treatment is capable to etch perovskite film. A rectangular metal mask is placed to a perovskite film to form a mesa structure. The morphology of treated film is dramatically changed from metal mask to outward direction. In the patterned area eight regions are observed possessing different morphologies. The microstructures and compositions of the plasma-processed semiconducting films are analyzed in each region.

AB - Patterning of organic-inorganic hybrid methyl ammonium lead iodide (CH3NH3PbI3) perovskite films by atmospheric hydrogen plasma is explored. It is estimated that among oxygen, nitrogen, and hydrogen plasmas only the hydrogen plasma treatment is capable to etch perovskite film. A rectangular metal mask is placed to a perovskite film to form a mesa structure. The morphology of treated film is dramatically changed from metal mask to outward direction. In the patterned area eight regions are observed possessing different morphologies. The microstructures and compositions of the plasma-processed semiconducting films are analyzed in each region.

KW - Atmospheric hydrogen plasma

KW - Dry etching

KW - Metal mask

KW - Perovskite thin film

UR - https://www.scopus.com/pages/publications/85034603833

U2 - 10.1016/j.mssp.2017.11.019

DO - 10.1016/j.mssp.2017.11.019

M3 - Article

AN - SCOPUS:85034603833

SN - 1369-8001

VL - 75

SP - 1

EP - 9

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -