Novel band-to-band tunneling body contact (BTBC) structure to suppress the floating-body effect in a vertical-cell DRAM

Youngseung Cho; Pyeongho Choi; Younghwan Hyeon; Junhwa Song; Yoosang Hwang; Byoungdeog Choi

doi:10.1109/LED.2018.2874303

Novel band-to-band tunneling body contact (BTBC) structure to suppress the floating-body effect in a vertical-cell DRAM

Youngseung Cho
, Pyeongho Choi
, Younghwan Hyeon
, Junhwa Song
, Yoosang Hwang
, Byoungdeog Choi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A vertical cell is the best structure for optimizing dynamic random access memory size. However, this structure has a fatal weakness called the floating-body effect (FBE). In this letter, we propose a new vertical structure to suppress FBE and short-channel effects, and successfully demonstrate the structure through simulation. In the new structure, the band-to-band tunnel diode body contact is built in the source region, which effectively releases the accumulated body carriers. In the buried contact, a heavily doped p⁺ layer is introduced next to the n⁺ source region, effectively connecting the body and source through tunneling. Furthermore, the proposed structure shows an extremely high ON-state to OFF-state current (I_ON/I_OFF) ratio of 10⁷ for a channel length of 100 nm.

Original language	English
Article number	8485339
Pages (from-to)	1860-1863
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	12
DOIs	https://doi.org/10.1109/LED.2018.2874303
State	Published - Dec 2018

Keywords

4F
bipolar junction transistor (BJT)
DRAM chips
memory architecture
vertical cell array

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10.1109/LED.2018.2874303

Cite this

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title = "Novel band-to-band tunneling body contact (BTBC) structure to suppress the floating-body effect in a vertical-cell DRAM",

abstract = "A vertical cell is the best structure for optimizing dynamic random access memory size. However, this structure has a fatal weakness called the floating-body effect (FBE). In this letter, we propose a new vertical structure to suppress FBE and short-channel effects, and successfully demonstrate the structure through simulation. In the new structure, the band-to-band tunnel diode body contact is built in the source region, which effectively releases the accumulated body carriers. In the buried contact, a heavily doped p+ layer is introduced next to the n+ source region, effectively connecting the body and source through tunneling. Furthermore, the proposed structure shows an extremely high ON-state to OFF-state current (ION/IOFF) ratio of 107 for a channel length of 100 nm.",

keywords = "4F, bipolar junction transistor (BJT), DRAM chips, memory architecture, vertical cell array",

author = "Youngseung Cho and Pyeongho Choi and Younghwan Hyeon and Junhwa Song and Yoosang Hwang and Byoungdeog Choi",

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AU - Cho, Youngseung

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AU - Hyeon, Younghwan

AU - Song, Junhwa

AU - Hwang, Yoosang

AU - Choi, Byoungdeog

PY - 2018/12

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N2 - A vertical cell is the best structure for optimizing dynamic random access memory size. However, this structure has a fatal weakness called the floating-body effect (FBE). In this letter, we propose a new vertical structure to suppress FBE and short-channel effects, and successfully demonstrate the structure through simulation. In the new structure, the band-to-band tunnel diode body contact is built in the source region, which effectively releases the accumulated body carriers. In the buried contact, a heavily doped p+ layer is introduced next to the n+ source region, effectively connecting the body and source through tunneling. Furthermore, the proposed structure shows an extremely high ON-state to OFF-state current (ION/IOFF) ratio of 107 for a channel length of 100 nm.

AB - A vertical cell is the best structure for optimizing dynamic random access memory size. However, this structure has a fatal weakness called the floating-body effect (FBE). In this letter, we propose a new vertical structure to suppress FBE and short-channel effects, and successfully demonstrate the structure through simulation. In the new structure, the band-to-band tunnel diode body contact is built in the source region, which effectively releases the accumulated body carriers. In the buried contact, a heavily doped p+ layer is introduced next to the n+ source region, effectively connecting the body and source through tunneling. Furthermore, the proposed structure shows an extremely high ON-state to OFF-state current (ION/IOFF) ratio of 107 for a channel length of 100 nm.

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KW - vertical cell array

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Novel band-to-band tunneling body contact (BTBC) structure to suppress the floating-body effect in a vertical-cell DRAM

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Keywords

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