Nonvolatile organic memory devices with CdTe quantum dots

The nonvolatile organic memory devices were fabricated utilizing CdTe quantum dots (QDs). QDs were used as a hole-trapping component in the memory device. We analyzed the electrical properties of the memory device fabricated with CdTe QDs by measuring the capacitance-voltage characteristics and retention time. A number of holes were trapped in CdTe from pentacene, which formed band bending between pentacene and QD layer. We observed large hysteresis at capacitance-voltage response during the operation of the device. The long retention of programmed state time of 104 s can be potentially useful in practical applications of non-volatile memory.