Nonvolatile memory devices with oxide-nitride-oxynitride stack structure for system on panel of mobile flat panel display

Sungwook Jung; Byeong Deog Choi; Junsin Yi

Nonvolatile memory devices with oxide-nitride-oxynitride stack structure for system on panel of mobile flat panel display

Sungwook Jung
, Byeong Deog Choi
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (δ V_TH) after 10⁵ P/E cycles.

Original language	English
Pages (from-to)	911-913
Number of pages	3
Journal	Proceedings of International Meeting on Information Display
Volume	8
State	Published - 2008
Event	8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 - Ilsan, Korea, Republic of Duration: 13 Oct 2008 → 17 Oct 2008

Keywords

Glass
Nonvolatile memory
Plasma treatment
System on panel

Cite this

@article{e19945e0e61843af9fa1f85e65ad6293,

title = "Nonvolatile memory devices with oxide-nitride-oxynitride stack structure for system on panel of mobile flat panel display",

abstract = "In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (δ VTH) after 105 P/E cycles.",

keywords = "Glass, Nonvolatile memory, Plasma treatment, System on panel",

author = "Sungwook Jung and Choi, \{Byeong Deog\} and Junsin Yi",

year = "2008",

language = "English",

volume = "8",

pages = "911--913",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 ; Conference date: 13-10-2008 Through 17-10-2008",

}

TY - JOUR

T1 - Nonvolatile memory devices with oxide-nitride-oxynitride stack structure for system on panel of mobile flat panel display

AU - Jung, Sungwook

AU - Choi, Byeong Deog

AU - Yi, Junsin

PY - 2008

Y1 - 2008

N2 - In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (δ VTH) after 105 P/E cycles.

AB - In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (δ VTH) after 105 P/E cycles.

KW - Glass

KW - Nonvolatile memory

KW - Plasma treatment

KW - System on panel

UR - https://www.scopus.com/pages/publications/65649141605

M3 - Conference article

AN - SCOPUS:65649141605

SN - 1738-7558

VL - 8

SP - 911

EP - 913

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - 8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008

Y2 - 13 October 2008 through 17 October 2008

ER -

Nonvolatile memory devices with oxide-nitride-oxynitride stack structure for system on panel of mobile flat panel display

Abstract

Keywords

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