Non-volatile organic memory based on CdSe nano-particle/PMMA blend as a tunneling layer

Jung Min Kim; Dong Hoon Lee; Jun Ho Jeun; Tae Sik Yoon; Hyun Ho Lee; Jong Wook Lee; Yong Sang Kim

doi:10.1016/j.synthmet.2011.03.023

Non-volatile organic memory based on CdSe nano-particle/PMMA blend as a tunneling layer

Jung Min Kim, Dong Hoon Lee, Jun Ho Jeun, Tae Sik Yoon, Hyun Ho Lee, Jong Wook Lee, Yong Sang Kim

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The use of nano-particle/polymer blend as the tunneling layer for non-volatile organic memory is an alternative to change and improve the device characteristics and performances. A non-volatile organic memory based on the pentacene semiconductor/polymethylmethacrylate (PMMA) + CdSe nano-particle blend tunneling insulator/PMMA gate insulator, is demonstrated by a simple fabrication process. We have observed the charging and discharging effect of CdSe NPs, using capacitance-voltage and current-voltage measurement. The capacitance and current change were observed by a charge transport between the pentacene semiconductor and the CdSe nano-particles. In addition, good reliability was confirmed by the retention characteristics.

Original language	English
Pages (from-to)	1155-1158
Number of pages	4
Journal	Synthetic Metals
Volume	161
Issue number	13-14
DOIs	https://doi.org/10.1016/j.synthmet.2011.03.023
State	Published - Jul 2011
Externally published	Yes

Keywords

CdSe nano-particles
Nano-particle/polymer blend
Non-volatile organic memory

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10.1016/j.synthmet.2011.03.023

Cite this

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title = "Non-volatile organic memory based on CdSe nano-particle/PMMA blend as a tunneling layer",

abstract = "The use of nano-particle/polymer blend as the tunneling layer for non-volatile organic memory is an alternative to change and improve the device characteristics and performances. A non-volatile organic memory based on the pentacene semiconductor/polymethylmethacrylate (PMMA) + CdSe nano-particle blend tunneling insulator/PMMA gate insulator, is demonstrated by a simple fabrication process. We have observed the charging and discharging effect of CdSe NPs, using capacitance-voltage and current-voltage measurement. The capacitance and current change were observed by a charge transport between the pentacene semiconductor and the CdSe nano-particles. In addition, good reliability was confirmed by the retention characteristics.",

keywords = "CdSe nano-particles, Nano-particle/polymer blend, Non-volatile organic memory",

author = "Kim, \{Jung Min\} and Lee, \{Dong Hoon\} and Jeun, \{Jun Ho\} and Yoon, \{Tae Sik\} and Lee, \{Hyun Ho\} and Lee, \{Jong Wook\} and Kim, \{Yong Sang\}",

year = "2011",

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doi = "10.1016/j.synthmet.2011.03.023",

language = "English",

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T1 - Non-volatile organic memory based on CdSe nano-particle/PMMA blend as a tunneling layer

AU - Kim, Jung Min

AU - Lee, Dong Hoon

AU - Jeun, Jun Ho

AU - Yoon, Tae Sik

AU - Lee, Hyun Ho

AU - Lee, Jong Wook

AU - Kim, Yong Sang

PY - 2011/7

Y1 - 2011/7

N2 - The use of nano-particle/polymer blend as the tunneling layer for non-volatile organic memory is an alternative to change and improve the device characteristics and performances. A non-volatile organic memory based on the pentacene semiconductor/polymethylmethacrylate (PMMA) + CdSe nano-particle blend tunneling insulator/PMMA gate insulator, is demonstrated by a simple fabrication process. We have observed the charging and discharging effect of CdSe NPs, using capacitance-voltage and current-voltage measurement. The capacitance and current change were observed by a charge transport between the pentacene semiconductor and the CdSe nano-particles. In addition, good reliability was confirmed by the retention characteristics.

AB - The use of nano-particle/polymer blend as the tunneling layer for non-volatile organic memory is an alternative to change and improve the device characteristics and performances. A non-volatile organic memory based on the pentacene semiconductor/polymethylmethacrylate (PMMA) + CdSe nano-particle blend tunneling insulator/PMMA gate insulator, is demonstrated by a simple fabrication process. We have observed the charging and discharging effect of CdSe NPs, using capacitance-voltage and current-voltage measurement. The capacitance and current change were observed by a charge transport between the pentacene semiconductor and the CdSe nano-particles. In addition, good reliability was confirmed by the retention characteristics.

KW - CdSe nano-particles

KW - Nano-particle/polymer blend

KW - Non-volatile organic memory

UR - https://www.scopus.com/pages/publications/79959922913

U2 - 10.1016/j.synthmet.2011.03.023

DO - 10.1016/j.synthmet.2011.03.023

M3 - Article

AN - SCOPUS:79959922913

SN - 0379-6779

VL - 161

SP - 1155

EP - 1158

JO - Synthetic Metals

JF - Synthetic Metals

IS - 13-14

ER -

Non-volatile organic memory based on CdSe nano-particle/PMMA blend as a tunneling layer

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Keywords

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