Non-volatile logic-in-memory ternary content addressable memory circuit with floating gate field effect transistor

Engineering

• Field-Effect Transistor 100%
• Floating Gate 100%
• ternary content addressable memory 100%
• Complementary Metal-Oxide-Semiconductor 33%
• Nodes 33%
• Applicability 16%
• Limitations 16%
• Circuit Design 16%
• Metal-Oxide-Semiconductor Field-Effect Transistor 16%
• Electric Network Analysis 16%
• Field Effect Transistor 16%
• Dynamic Random Access Memory 16%
• Conservation of Energy 16%
• Research System 16%
• Transistor 16%

Material Science

• Electronic Circuit 100%
• Field Effect Transistor 100%
• Silicon 25%
• Complementary Metal-Oxide-Semiconductor Device 25%
• Transistor 12%
• Metal-Oxide-Semiconductor Field-Effect Transistor 12%