TY - GEN
T1 - Non-ideal characteristic analysis of GaN-based light-emitting diode using current-voltage (I-V) and low-frequency noise experiment
AU - Park, Jungjin
AU - Kang, Taewook
AU - Woo, Daeyoung
AU - Son, Joong Kon
AU - Lee, Jong Ho
AU - Park, Byung Gook
AU - Shin, Hyungcheol
PY - 2011
Y1 - 2011
N2 - In order to investigate the reliability problem of the GaN-based light-emitting diode (LED), the non-ideal characteristics of the GaN-based LED were analyzed through current-voltage (I-V) and low-frequency noise experiment. Ideality factor, parasitic resistance and parasitic diode were considered to analyze the I-V characteristic. We could find that the parasitic diode makes the forward hump and divides the I-V curve into the parasitic and the main part. Those two parts have much different ideality factor and series resistance value, respectively. Power spectral density (PSD) with various frequency and current were measured to examine the noise characteristic. We could find the high level and the steep slope of the PSD at low currents, which indicate the unstable noise characteristic.
AB - In order to investigate the reliability problem of the GaN-based light-emitting diode (LED), the non-ideal characteristics of the GaN-based LED were analyzed through current-voltage (I-V) and low-frequency noise experiment. Ideality factor, parasitic resistance and parasitic diode were considered to analyze the I-V characteristic. We could find that the parasitic diode makes the forward hump and divides the I-V curve into the parasitic and the main part. Those two parts have much different ideality factor and series resistance value, respectively. Power spectral density (PSD) with various frequency and current were measured to examine the noise characteristic. We could find the high level and the steep slope of the PSD at low currents, which indicate the unstable noise characteristic.
UR - https://www.scopus.com/pages/publications/80052623528
U2 - 10.1109/IPFA.2011.5992713
DO - 10.1109/IPFA.2011.5992713
M3 - Conference contribution
AN - SCOPUS:80052623528
SN - 9781457701597
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
BT - 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
T2 - 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
Y2 - 4 July 2011 through 7 July 2011
ER -