TY - GEN
T1 - Noise in nano-scale MOSFETs and flash cells
AU - Shin, Hyungcheol
AU - Yang, Seungwon
AU - Jeon, Jongwook
AU - Kang, Daewoong
PY - 2008
Y1 - 2008
N2 - In this paper, we present a compact channel thermal noise model for short-channel MOSFETs which takes into account various short channel effects. Then, we compared measured data with shot-like noise level and thermal noise model in sub-40 nm CMOS devices. Also we characterized four level RTN (Random Telegraph Noise) and extracted the characteristics of two independent traps in MOSFETs and flash cells. Their vertical, lateral locations in the oxide as well as the trap energy (ET) were obtained by using accurate equations.
AB - In this paper, we present a compact channel thermal noise model for short-channel MOSFETs which takes into account various short channel effects. Then, we compared measured data with shot-like noise level and thermal noise model in sub-40 nm CMOS devices. Also we characterized four level RTN (Random Telegraph Noise) and extracted the characteristics of two independent traps in MOSFETs and flash cells. Their vertical, lateral locations in the oxide as well as the trap energy (ET) were obtained by using accurate equations.
UR - https://www.scopus.com/pages/publications/60649109246
U2 - 10.1109/ICSICT.2008.4734478
DO - 10.1109/ICSICT.2008.4734478
M3 - Conference contribution
AN - SCOPUS:60649109246
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 88
EP - 91
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Y2 - 20 October 2008 through 23 October 2008
ER -