NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

Jingde Chen; X. P. Wang; Ming Fu Li; S. J. Lee; M. B. Yu; C. Shen; Yee Chia Yeo

doi:10.1109/LED.2007.904210

NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

Jingde Chen, X. P. Wang, Ming Fu Li, S. J. Lee, M. B. Yu, C. Shen, Yee Chia Yeo

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO₂ with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.

Original language	English
Pages (from-to)	862-864
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	10
DOIs	https://doi.org/10.1109/LED.2007.904210
State	Published - Oct 2007
Externally published	Yes

Keywords

Erbium
High-κ dielectric
Lanthanide
Metal gate
MOS capacitor
Rare earth metal

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10.1109/LED.2007.904210

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title = "NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric",

abstract = "This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.",

keywords = "Erbium, High-κ dielectric, Lanthanide, Metal gate, MOS capacitor, Rare earth metal",

author = "Jingde Chen and Wang, \{X. P.\} and Li, \{Ming Fu\} and Lee, \{S. J.\} and Yu, \{M. B.\} and C. Shen and Yeo, \{Yee Chia\}",

year = "2007",

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doi = "10.1109/LED.2007.904210",

language = "English",

volume = "28",

pages = "862--864",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

AU - Chen, Jingde

AU - Wang, X. P.

AU - Li, Ming Fu

AU - Lee, S. J.

AU - Yu, M. B.

AU - Shen, C.

AU - Yeo, Yee Chia

PY - 2007/10

Y1 - 2007/10

N2 - This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.

AB - This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.

KW - Erbium

KW - High-κ dielectric

KW - Lanthanide

KW - Metal gate

KW - MOS capacitor

KW - Rare earth metal

UR - https://www.scopus.com/pages/publications/34948898010

U2 - 10.1109/LED.2007.904210

DO - 10.1109/LED.2007.904210

M3 - Article

AN - SCOPUS:34948898010

SN - 0741-3106

VL - 28

SP - 862

EP - 864

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

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Keywords

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