NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

Jingde Chen; X. P. Wang; Ming Fu Li; S. J. Lee; M. B. Yu; C. Shen; Yee Chia Yeo

doi:10.1142/9781848164079_0006

NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

Jingde Chen
, X. P. Wang
, Ming Fu Li
, S. J. Lee
, M. B. Yu
, C. Shen
, Yee Chia Yeo

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxidedoped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO₂with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.

Original language	English
Title of host publication	Selected Semiconductor Research
Publisher	Imperial College Press
Pages	371-373
Number of pages	3
ISBN (Electronic)	9781848164079
ISBN (Print)	9781848164062
DOIs	https://doi.org/10.1142/9781848164079_0006
State	Published - 1 Jan 2011
Externally published	Yes

Keywords

Erbium
High-k dielectric
Lanthanide
Metal gate
MOS capacitor
Rare earth metal

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10.1142/9781848164079_0006

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title = "NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric",

abstract = "This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxidedoped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.",

keywords = "Erbium, High-k dielectric, Lanthanide, Metal gate, MOS capacitor, Rare earth metal",

author = "Jingde Chen and Wang, \{X. P.\} and Li, \{Ming Fu\} and Lee, \{S. J.\} and Yu, \{M. B.\} and C. Shen and Yeo, \{Yee Chia\}",

year = "2011",

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doi = "10.1142/9781848164079\_0006",

language = "English",

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T1 - NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

AU - Chen, Jingde

AU - Wang, X. P.

AU - Li, Ming Fu

AU - Lee, S. J.

AU - Yu, M. B.

AU - Shen, C.

AU - Yeo, Yee Chia

PY - 2011/1/1

Y1 - 2011/1/1

N2 - This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxidedoped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.

AB - This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxidedoped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.

KW - Erbium

KW - High-k dielectric

KW - Lanthanide

KW - Metal gate

KW - MOS capacitor

KW - Rare earth metal

UR - https://www.scopus.com/pages/publications/84967495519

U2 - 10.1142/9781848164079_0006

DO - 10.1142/9781848164079_0006

M3 - Chapter

AN - SCOPUS:84967495519

SN - 9781848164062

SP - 371

EP - 373

BT - Selected Semiconductor Research

PB - Imperial College Press

ER -

NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

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Keywords

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