Nitronyl nitroxide radicals as organic memory elements with both n- and p-type properties

Junghyun Lee; Eunkyo Lee; Sangkwan Kim; Gyeong Sook Bang; David A. Shultz; Robert D. Schmidt; Malcolm D.E. Forbes; Hyoyoung Lee

doi:10.1002/anie.201004899

Nitronyl nitroxide radicals as organic memory elements with both n- and p-type properties

Junghyun Lee
, Eunkyo Lee
, Sangkwan Kim
, Gyeong Sook Bang
, David A. Shultz
, Robert D. Schmidt
, Malcolm D.E. Forbes
, Hyoyoung Lee

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

115 Scopus citations

Abstract

Can't fight the SEEPR: Simultaneous electrochemical electron paramagnetic resonance reveals that a molecule containing the nitronyl nitroxide (NN) radical (structure and red layer) is redox-active, with switchability between oxidized and reduced states. An organic NN radical device utilizes the dual p- and n-type properties in a memory device.

Original language	English
Pages (from-to)	4414-4418
Number of pages	5
Journal	Angewandte Chemie - International Edition
Volume	50
Issue number	19
DOIs	https://doi.org/10.1002/anie.201004899
State	Published - 2 May 2011

Keywords

electron paramagnetic resonance
memory devices
molecular electronics
nitrogen radicals
organic radicals

Access to Document

10.1002/anie.201004899

Cite this

@article{76120634cfa241f4b253c2bcba09fbcf,

title = "Nitronyl nitroxide radicals as organic memory elements with both n- and p-type properties",

abstract = "Can't fight the SEEPR: Simultaneous electrochemical electron paramagnetic resonance reveals that a molecule containing the nitronyl nitroxide (NN) radical (structure and red layer) is redox-active, with switchability between oxidized and reduced states. An organic NN radical device utilizes the dual p- and n-type properties in a memory device.",

keywords = "electron paramagnetic resonance, memory devices, molecular electronics, nitrogen radicals, organic radicals",

author = "Junghyun Lee and Eunkyo Lee and Sangkwan Kim and Bang, \{Gyeong Sook\} and Shultz, \{David A.\} and Schmidt, \{Robert D.\} and Forbes, \{Malcolm D.E.\} and Hyoyoung Lee",

year = "2011",

month = may,

day = "2",

doi = "10.1002/anie.201004899",

language = "English",

volume = "50",

pages = "4414--4418",

journal = "Angewandte Chemie - International Edition",

issn = "1433-7851",

publisher = "John Wiley and Sons Ltd",

number = "19",

}

TY - JOUR

T1 - Nitronyl nitroxide radicals as organic memory elements with both n- and p-type properties

AU - Lee, Junghyun

AU - Lee, Eunkyo

AU - Kim, Sangkwan

AU - Bang, Gyeong Sook

AU - Shultz, David A.

AU - Schmidt, Robert D.

AU - Forbes, Malcolm D.E.

AU - Lee, Hyoyoung

PY - 2011/5/2

Y1 - 2011/5/2

N2 - Can't fight the SEEPR: Simultaneous electrochemical electron paramagnetic resonance reveals that a molecule containing the nitronyl nitroxide (NN) radical (structure and red layer) is redox-active, with switchability between oxidized and reduced states. An organic NN radical device utilizes the dual p- and n-type properties in a memory device.

AB - Can't fight the SEEPR: Simultaneous electrochemical electron paramagnetic resonance reveals that a molecule containing the nitronyl nitroxide (NN) radical (structure and red layer) is redox-active, with switchability between oxidized and reduced states. An organic NN radical device utilizes the dual p- and n-type properties in a memory device.

KW - electron paramagnetic resonance

KW - memory devices

KW - molecular electronics

KW - nitrogen radicals

KW - organic radicals

UR - https://www.scopus.com/pages/publications/79955508865

U2 - 10.1002/anie.201004899

DO - 10.1002/anie.201004899

M3 - Article

AN - SCOPUS:79955508865

SN - 1433-7851

VL - 50

SP - 4414

EP - 4418

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

IS - 19

ER -

Nitronyl nitroxide radicals as organic memory elements with both n- and p-type properties

Abstract

Keywords

Access to Document

Other files and links

Cite this