Ni-catalyzed growth of silicon wire arrays for a Schottky diode

Sang Won Jee; Joondong Kim; Jin Young Jung; Han Don Um; Syed Abdul Moiz; Bongyoung Yoo; Hyung Koun Cho; Yun Chang Park; Jung Ho Lee

doi:10.1063/1.3467839

Ni-catalyzed growth of silicon wire arrays for a Schottky diode

Sang Won Jee
, Joondong Kim
, Jin Young Jung
, Han Don Um
, Syed Abdul Moiz
, Bongyoung Yoo
, Hyung Koun Cho
, Yun Chang Park
, Jung Ho Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Vertically grown Si wire arrays were fabricated on a large scale by the Ni-catalyzed vapor-liquid-solid method. A single Si wire has a length of several tens of micrometers with a pure Si stem and a NiSi₂ tip. The NiSi₂ tip was spontaneously formed on a Si wire due to a slight lattice mismatch relative to Si. Further, this system provides a Schottky contact having a rectifying ratio of ∼10² with a low leakage current of about 2.88× 10^-10 A. The growth mechanism of vertical Si wires and the performance of a Schottky diode are discussed.

Original language	English
Article number	042103
Journal	Applied Physics Letters
Volume	97
Issue number	4
DOIs	https://doi.org/10.1063/1.3467839
State	Published - 26 Jul 2010

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@article{0b21cd17a7a746e682848a09a8d14820,

title = "Ni-catalyzed growth of silicon wire arrays for a Schottky diode",

abstract = "Vertically grown Si wire arrays were fabricated on a large scale by the Ni-catalyzed vapor-liquid-solid method. A single Si wire has a length of several tens of micrometers with a pure Si stem and a NiSi2 tip. The NiSi2 tip was spontaneously formed on a Si wire due to a slight lattice mismatch relative to Si. Further, this system provides a Schottky contact having a rectifying ratio of ∼102 with a low leakage current of about 2.88× 10-10 A. The growth mechanism of vertical Si wires and the performance of a Schottky diode are discussed.",

author = "Jee, \{Sang Won\} and Joondong Kim and Jung, \{Jin Young\} and Um, \{Han Don\} and Moiz, \{Syed Abdul\} and Bongyoung Yoo and Cho, \{Hyung Koun\} and Park, \{Yun Chang\} and Lee, \{Jung Ho\}",

year = "2010",

month = jul,

day = "26",

doi = "10.1063/1.3467839",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Ni-catalyzed growth of silicon wire arrays for a Schottky diode

AU - Jee, Sang Won

AU - Kim, Joondong

AU - Jung, Jin Young

AU - Um, Han Don

AU - Moiz, Syed Abdul

AU - Yoo, Bongyoung

AU - Cho, Hyung Koun

AU - Park, Yun Chang

AU - Lee, Jung Ho

PY - 2010/7/26

Y1 - 2010/7/26

N2 - Vertically grown Si wire arrays were fabricated on a large scale by the Ni-catalyzed vapor-liquid-solid method. A single Si wire has a length of several tens of micrometers with a pure Si stem and a NiSi2 tip. The NiSi2 tip was spontaneously formed on a Si wire due to a slight lattice mismatch relative to Si. Further, this system provides a Schottky contact having a rectifying ratio of ∼102 with a low leakage current of about 2.88× 10-10 A. The growth mechanism of vertical Si wires and the performance of a Schottky diode are discussed.

AB - Vertically grown Si wire arrays were fabricated on a large scale by the Ni-catalyzed vapor-liquid-solid method. A single Si wire has a length of several tens of micrometers with a pure Si stem and a NiSi2 tip. The NiSi2 tip was spontaneously formed on a Si wire due to a slight lattice mismatch relative to Si. Further, this system provides a Schottky contact having a rectifying ratio of ∼102 with a low leakage current of about 2.88× 10-10 A. The growth mechanism of vertical Si wires and the performance of a Schottky diode are discussed.

UR - https://www.scopus.com/pages/publications/77955758520

U2 - 10.1063/1.3467839

DO - 10.1063/1.3467839

M3 - Article

AN - SCOPUS:77955758520

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042103

ER -

Ni-catalyzed growth of silicon wire arrays for a Schottky diode

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