Abstract
Near-infrared (NIR)-sensitive hybrid bulk heterojunction solar cells were developed using NIR-absorbing HgTe quantum dots (QDs) and a low-bandgap polymer, poly[2,6-(4,4′-bis-(2-ethylhexyl)dithieno[3,2-b:2′,3′-d] silole)-alt-4,7(2,1,3-benzothiadiazole)] (PSBTBT). Hybrid composites of HgTe QDs and PSBTBT facilitate broad-range exploitation of the solar spectrum and efficient carrier dissociation prior to recombination. Nanostructures were formed on the surface of the hybrid composite via a nanoimprinting process using an anodic aluminum oxide (AAO) mold. This contributes to optical light scattering for efficient utilization of light up to the NIR region and enlarged photoactive layer-electrode interfacial areas for improving charge extraction, increasing the overall efficiency from 1.09 to 1.41%.
| Original language | English |
|---|---|
| Pages (from-to) | 163-169 |
| Number of pages | 7 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 126 |
| DOIs | |
| State | Published - Jul 2014 |
| Externally published | Yes |
Keywords
- Anodic aluminum oxide
- HgTe quantum dot
- Hybrid solar cell
- Low-bandgap polymer
- Nanoimprinting