Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

S. I. Jung; H. Y. Yeo; I. Yun; I. K. Han; S. M. Cho; J. I. Lee

doi:10.3938/jkps.50.763

Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

S. I. Jung
, H. Y. Yeo
, I. Yun
, I. K. Han
, S. M. Cho
, J. I. Lee

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

Original language	English
Pages (from-to)	763-766
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.763
State	Published - Mar 2007

Keywords

Electroluminescence
Near-field scanning optical microscopy
Quantum dot laser diode

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10.3938/jkps.50.763

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title = "Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy",

abstract = "Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.",

keywords = "Electroluminescence, Near-field scanning optical microscopy, Quantum dot laser diode",

author = "Jung, \{S. I.\} and Yeo, \{H. Y.\} and I. Yun and Han, \{I. K.\} and Cho, \{S. M.\} and Lee, \{J. I.\}",

year = "2007",

month = mar,

doi = "10.3938/jkps.50.763",

language = "English",

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pages = "763--766",

journal = "Journal of the Korean Physical Society",

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publisher = "Korean Physical Society",

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T1 - Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

AU - Jung, S. I.

AU - Yeo, H. Y.

AU - Yun, I.

AU - Han, I. K.

AU - Cho, S. M.

AU - Lee, J. I.

PY - 2007/3

Y1 - 2007/3

N2 - Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

AB - Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

KW - Electroluminescence

KW - Near-field scanning optical microscopy

KW - Quantum dot laser diode

UR - https://www.scopus.com/pages/publications/34147169381

U2 - 10.3938/jkps.50.763

DO - 10.3938/jkps.50.763

M3 - Article

AN - SCOPUS:34147169381

SN - 0374-4884

VL - 50

SP - 763

EP - 766

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

Abstract

Keywords

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