Abstract
High-quality a-Si TFTs were fabricated on 7 inch plastic PES substrates at 130°C and 100°C. It had been shown that the key factor for successful TFT fabrication on the relatively large plastic substrates is thorough control of total active layer's stress by means of deposition temperature, reduction and single layer's intrinsic stress optimization.
| Original language | English |
|---|---|
| Pages (from-to) | 434-437 |
| Number of pages | 4 |
| Journal | Proceedings of International Meeting on Information Display |
| Volume | 2006 |
| State | Published - 2006 |
| Externally published | Yes |
| Event | IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006 |
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