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Near 100°C low temperature a-Si TFT array fabrication on 7 inch flexible PES substrates

  • Ivan V. Nikulin
  • , Tae Hyung Hwang
  • , Hyung Il Jeon
  • , Sang Il Kim
  • , Nam Seok Roh
  • , Seong Sik Shin
  • Samsung

Research output: Contribution to journalConference articlepeer-review

Abstract

High-quality a-Si TFTs were fabricated on 7 inch plastic PES substrates at 130°C and 100°C. It had been shown that the key factor for successful TFT fabrication on the relatively large plastic substrates is thorough control of total active layer's stress by means of deposition temperature, reduction and single layer's intrinsic stress optimization.

Original languageEnglish
Pages (from-to)434-437
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2006
StatePublished - 2006
Externally publishedYes
EventIMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of
Duration: 22 Aug 200625 Aug 2006

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