Nano-Scale Island (Dot)-Induced Optical Emission in InGaN Quantum Wells

K. S. Kim; W. H. Lee; C. S. Kim; G. M. Yang; C. H. Hong; E. K. Suh; K. Y. Lim; H. J. Lee; H. K. Cho; J. Y. Lee; M. Yang; Y. H. Lee; J. M. Seo

Nano-Scale Island (Dot)-Induced Optical Emission in InGaN Quantum Wells

K. S. Kim
, W. H. Lee
, C. S. Kim
, G. M. Yang
, C. H. Hong
, E. K. Suh
, K. Y. Lim
, H. J. Lee
, H. K. Cho
, J. Y. Lee
, M. Yang
, Y. H. Lee
, J. M. Seo

Research output: Contribution to journal › Article › peer-review

Abstract

Thin InGaN layers were grown using metalorganic chemical vapor deposition and were characterized using atomic force microscopy and high-resolution transmission electron microscopy. InGaN on GaN exhibits a Stranski-Krastanov growth mode, including a 2D wetting layer and 3D self-assembled quantum dots. We also observed that the InGaN nano-scale dots had a truncated cone shape with {1-102} facets with respect to the (0002) surface. A visible spectral range from UV to green was easily obtained by changing the InGaN quantum well thickness up to 2.3 nm.

Original language	English
Pages (from-to)	141-146
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	39
Issue number	1
State	Published - Jul 2001
Externally published	Yes

Cite this

@article{df2223590e8546abbc38fbf9adec973f,

title = "Nano-Scale Island (Dot)-Induced Optical Emission in InGaN Quantum Wells",

abstract = "Thin InGaN layers were grown using metalorganic chemical vapor deposition and were characterized using atomic force microscopy and high-resolution transmission electron microscopy. InGaN on GaN exhibits a Stranski-Krastanov growth mode, including a 2D wetting layer and 3D self-assembled quantum dots. We also observed that the InGaN nano-scale dots had a truncated cone shape with \{1-102\} facets with respect to the (0002) surface. A visible spectral range from UV to green was easily obtained by changing the InGaN quantum well thickness up to 2.3 nm.",

author = "Kim, \{K. S.\} and Lee, \{W. H.\} and Kim, \{C. S.\} and Yang, \{G. M.\} and Hong, \{C. H.\} and Suh, \{E. K.\} and Lim, \{K. Y.\} and Lee, \{H. J.\} and Cho, \{H. K.\} and Lee, \{J. Y.\} and M. Yang and Lee, \{Y. H.\} and Seo, \{J. M.\}",

year = "2001",

month = jul,

language = "English",

volume = "39",

pages = "141--146",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

TY - JOUR

T1 - Nano-Scale Island (Dot)-Induced Optical Emission in InGaN Quantum Wells

AU - Kim, K. S.

AU - Lee, W. H.

AU - Kim, C. S.

AU - Yang, G. M.

AU - Hong, C. H.

AU - Suh, E. K.

AU - Lim, K. Y.

AU - Lee, H. J.

AU - Cho, H. K.

AU - Lee, J. Y.

AU - Yang, M.

AU - Lee, Y. H.

AU - Seo, J. M.

PY - 2001/7

Y1 - 2001/7

N2 - Thin InGaN layers were grown using metalorganic chemical vapor deposition and were characterized using atomic force microscopy and high-resolution transmission electron microscopy. InGaN on GaN exhibits a Stranski-Krastanov growth mode, including a 2D wetting layer and 3D self-assembled quantum dots. We also observed that the InGaN nano-scale dots had a truncated cone shape with {1-102} facets with respect to the (0002) surface. A visible spectral range from UV to green was easily obtained by changing the InGaN quantum well thickness up to 2.3 nm.

AB - Thin InGaN layers were grown using metalorganic chemical vapor deposition and were characterized using atomic force microscopy and high-resolution transmission electron microscopy. InGaN on GaN exhibits a Stranski-Krastanov growth mode, including a 2D wetting layer and 3D self-assembled quantum dots. We also observed that the InGaN nano-scale dots had a truncated cone shape with {1-102} facets with respect to the (0002) surface. A visible spectral range from UV to green was easily obtained by changing the InGaN quantum well thickness up to 2.3 nm.

UR - https://www.scopus.com/pages/publications/0035619451

M3 - Article

AN - SCOPUS:0035619451

SN - 0374-4884

VL - 39

SP - 141

EP - 146

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Nano-Scale Island (Dot)-Induced Optical Emission in InGaN Quantum Wells

Abstract

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