Nano-pore arrays of anodic aluminum oxide fabricated using a Cr mask

G. H. Jeong, S. K. Lim, J. K. Park, D. Lee, B. K. Lee, S. J. Suh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Nano-pore array of AAO were not formed in Cr and SiO2 mask patterned area while these arrays were formed in the unpatterned areas. These arrays arranged along the line edge of Cr mask pattern, as shown in Fig. 2. It was considered that current density increased at edge of Cr pattern due to the formation of Al2O3 at unpatterned Al surface by anodizing. Fig. 3 shows SEM image of AAO anodized under anodizing voltage of 5V and 8V. Nano-pores were formed in both patterned and unpatterned areas at relatively high voltage. Fig. 4 shows that the variation of nano-pore arrays with the size of exposed Al surface and edge effect decreased.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages192-193
Number of pages2
DOIs
StatePublished - 2007
Events20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan
Duration: 5 Nov 20078 Nov 2007

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Conference

Conferences20th International Microprocesses and Nanotechnology Conference, MNC 2007
Country/TerritoryJapan
CityKyoto
Period5/11/078/11/07

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