N-channel germanium MOSFET fabricated below 360°C by cobalt-induced dopant activation for monolithic three-dimensional-ICs

Jin Hong Park; Duygu Kuzum; Woo Shik Jung; Krishna C. Saraswat

doi:10.1109/LED.2010.2095827

N-channel germanium MOSFET fabricated below 360°C by cobalt-induced dopant activation for monolithic three-dimensional-ICs

Jin Hong Park
, Duygu Kuzum
, Woo Shik Jung
, Krishna C. Saraswat

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Below 360°C, we demonstrate germanium (Ge) n⁺p junction diode and n-channel Ge metaloxidesemiconductor field-effect transistor (MOSFET) with a low-temperature Al/Al₂O₃GeO₂ gate stack for monolithic 3-D integration using a metal-induced dopant activation (MIDA) technique. In particular, the cobalt (Co) MIDA phenomenon is investigated on Ge damaged by an implantation process. Shallow ( ∼100 nm) source/drain junctions with very low resistivity 5.2×10^-4Ω-cm are then achieved at very low temperature by the Co MIDA technique. Consequently, high diode and transistor current on/off ratios (∼10^-4 and ∼10^-3, respectively) are obtained in this n-channel Ge MOSFET.

Original language	English
Article number	5680583
Pages (from-to)	234-236
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2095827
State	Published - Mar 2011
Externally published	Yes

Keywords

3-D integrated circuits
Germanium
metal-induced crystallization (MIC)
metal-induced dopant activation (MIDA)
metaloxidesemiconductor field-effect transistor (MOSFET)

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10.1109/LED.2010.2095827

Cite this

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title = "N-channel germanium MOSFET fabricated below 360°C by cobalt-induced dopant activation for monolithic three-dimensional-ICs",

abstract = "Below 360°C, we demonstrate germanium (Ge) n+p junction diode and n-channel Ge metaloxidesemiconductor field-effect transistor (MOSFET) with a low-temperature Al/Al2O3GeO2 gate stack for monolithic 3-D integration using a metal-induced dopant activation (MIDA) technique. In particular, the cobalt (Co) MIDA phenomenon is investigated on Ge damaged by an implantation process. Shallow ( ∼100 nm) source/drain junctions with very low resistivity 5.2×10-4Ω-cm are then achieved at very low temperature by the Co MIDA technique. Consequently, high diode and transistor current on/off ratios (∼10-4 and ∼10-3, respectively) are obtained in this n-channel Ge MOSFET.",

keywords = "3-D integrated circuits, Germanium, metal-induced crystallization (MIC), metal-induced dopant activation (MIDA), metaloxidesemiconductor field-effect transistor (MOSFET)",

author = "Park, \{Jin Hong\} and Duygu Kuzum and Jung, \{Woo Shik\} and Saraswat, \{Krishna C.\}",

year = "2011",

month = mar,

doi = "10.1109/LED.2010.2095827",

language = "English",

volume = "32",

pages = "234--236",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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TY - JOUR

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AU - Park, Jin Hong

AU - Kuzum, Duygu

AU - Jung, Woo Shik

AU - Saraswat, Krishna C.

PY - 2011/3

Y1 - 2011/3

N2 - Below 360°C, we demonstrate germanium (Ge) n+p junction diode and n-channel Ge metaloxidesemiconductor field-effect transistor (MOSFET) with a low-temperature Al/Al2O3GeO2 gate stack for monolithic 3-D integration using a metal-induced dopant activation (MIDA) technique. In particular, the cobalt (Co) MIDA phenomenon is investigated on Ge damaged by an implantation process. Shallow ( ∼100 nm) source/drain junctions with very low resistivity 5.2×10-4Ω-cm are then achieved at very low temperature by the Co MIDA technique. Consequently, high diode and transistor current on/off ratios (∼10-4 and ∼10-3, respectively) are obtained in this n-channel Ge MOSFET.

AB - Below 360°C, we demonstrate germanium (Ge) n+p junction diode and n-channel Ge metaloxidesemiconductor field-effect transistor (MOSFET) with a low-temperature Al/Al2O3GeO2 gate stack for monolithic 3-D integration using a metal-induced dopant activation (MIDA) technique. In particular, the cobalt (Co) MIDA phenomenon is investigated on Ge damaged by an implantation process. Shallow ( ∼100 nm) source/drain junctions with very low resistivity 5.2×10-4Ω-cm are then achieved at very low temperature by the Co MIDA technique. Consequently, high diode and transistor current on/off ratios (∼10-4 and ∼10-3, respectively) are obtained in this n-channel Ge MOSFET.

KW - 3-D integrated circuits

KW - Germanium

KW - metal-induced crystallization (MIC)

KW - metal-induced dopant activation (MIDA)

KW - metaloxidesemiconductor field-effect transistor (MOSFET)

UR - https://www.scopus.com/pages/publications/79951949121

U2 - 10.1109/LED.2010.2095827

DO - 10.1109/LED.2010.2095827

M3 - Article

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JF - IEEE Electron Device Letters

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ER -

N-channel germanium MOSFET fabricated below 360°C by cobalt-induced dopant activation for monolithic three-dimensional-ICs

Abstract

Keywords

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