Abstract
Multiple data storage memory devices based on the controlled capacitive coupling of trapped electrons are fabricated using highly ordered arrays of metal nanoparticles. Results are presented from metal nanoparticle-based memory devices with controlled nanoparticle charge trapping elements, which undergo gate-voltage-adjustable multilevel memory states. Experimental and theoretical analysis for multilevel data manipulations and visualization of memory states are done on the nanometer scale.
| Original language | English |
|---|---|
| Pages (from-to) | 2064-2068 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 23 |
| Issue number | 18 |
| DOIs | |
| State | Published - 10 May 2011 |
| Externally published | Yes |
Keywords
- charge injection
- data storage
- electron transport
- nanoparticles
- semiconductors
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