Multilayered gated lateral quantum dot devices

C. T. Liang; M. Y. Simmons; C. G. Smith; Gil Ho Kim; D. A. Ritchie; M. Pepper

doi:10.1063/1.125961

Multilayered gated lateral quantum dot devices

C. T. Liang
, M. Y. Simmons
, C. G. Smith
, Gil Ho Kim
, D. A. Ritchie
, M. Pepper

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We describe a detailed device fabrication technique for the formation of a lateral quantum dot using a multilayered gated design. In our versatile system, a quantum dot is electrostatically defined by a split gate and two overlaying finger gates which introduce entrance and exit barriers to the dot, Periodic and continuous conductance oscillations arising from Coulomb charging effects are clearly observed in the transport properties at low temperatures.

Original language	English
Pages (from-to)	1134-1136
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	9
DOIs	https://doi.org/10.1063/1.125961
State	Published - 28 Feb 2000
Externally published	Yes

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10.1063/1.125961

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title = "Multilayered gated lateral quantum dot devices",

abstract = "We describe a detailed device fabrication technique for the formation of a lateral quantum dot using a multilayered gated design. In our versatile system, a quantum dot is electrostatically defined by a split gate and two overlaying finger gates which introduce entrance and exit barriers to the dot, Periodic and continuous conductance oscillations arising from Coulomb charging effects are clearly observed in the transport properties at low temperatures.",

author = "Liang, \{C. T.\} and Simmons, \{M. Y.\} and Smith, \{C. G.\} and Kim, \{Gil Ho\} and Ritchie, \{D. A.\} and M. Pepper",

year = "2000",

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journal = "Applied Physics Letters",

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AU - Liang, C. T.

AU - Simmons, M. Y.

AU - Smith, C. G.

AU - Kim, Gil Ho

AU - Ritchie, D. A.

AU - Pepper, M.

PY - 2000/2/28

Y1 - 2000/2/28

N2 - We describe a detailed device fabrication technique for the formation of a lateral quantum dot using a multilayered gated design. In our versatile system, a quantum dot is electrostatically defined by a split gate and two overlaying finger gates which introduce entrance and exit barriers to the dot, Periodic and continuous conductance oscillations arising from Coulomb charging effects are clearly observed in the transport properties at low temperatures.

AB - We describe a detailed device fabrication technique for the formation of a lateral quantum dot using a multilayered gated design. In our versatile system, a quantum dot is electrostatically defined by a split gate and two overlaying finger gates which introduce entrance and exit barriers to the dot, Periodic and continuous conductance oscillations arising from Coulomb charging effects are clearly observed in the transport properties at low temperatures.

UR - https://www.scopus.com/pages/publications/0000128389

U2 - 10.1063/1.125961

DO - 10.1063/1.125961

M3 - Article

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SN - 0003-6951

VL - 76

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EP - 1136

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Multilayered gated lateral quantum dot devices

Abstract

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