Multilayer transition-metal dichalcogenide channel Thin-Film Transistors

Eok Su Kim; Sunkook Kim; Yun Sung Lee; Sang Yoon Lee; Sunhee Lee; Woong Choi; Hartwin Peelaers; Chris G. Van De Walle; Wan Sik Hwang; Thomas Kosel; Debdeep Jena

doi:10.1109/IEDM.2012.6478985

Multilayer transition-metal dichalcogenide channel Thin-Film Transistors

Eok Su Kim
, Sunkook Kim
, Yun Sung Lee
, Sang Yoon Lee
, Sunhee Lee
, Woong Choi
, Hartwin Peelaers
, Chris G. Van De Walle
, Wan Sik Hwang
, Thomas Kosel
, Debdeep Jena

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

We show that multilayered transition-metal dichalcogenides such as multilayer MoS₂ present a compelling case for Thin-Film Transistors (TFTs) for large-area display technology. Through a combined structural, optical, and electronic characterization of multilayer MoS₂ TFTs, supported by density-functional theory based bandstructure calculations, we show the inherently attractive properties of these materials for such applications. We find that the current modulation of such devices is high, the current saturation is robust, normally-off operation is feasible, effective field-effect mobility at RT exceeds 100 cm²/V.s, and the channel can be operated in both accumulation and inversion modes. These properties make multilayer MoS₂ more feasible than single layer versions to maintain processing robustness.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	5.5.1-5.5.4
DOIs	https://doi.org/10.1109/IEDM.2012.6478985
State	Published - 2012
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 10 Dec 2012 → 13 Dec 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	10/12/12 → 13/12/12

Access to Document

10.1109/IEDM.2012.6478985

Cite this

Kim, E. S., Kim, S., Lee, Y. S., Lee, S. Y., Lee, S., Choi, W., Peelaers, H., Van De Walle, C. G., Hwang, W. S., Kosel, T., & Jena, D. (2012). Multilayer transition-metal dichalcogenide channel Thin-Film Transistors. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 5.5.1-5.5.4). Article 6478985 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6478985

@inproceedings{2745d795ff1b44b88192ada8f3b7720f,

title = "Multilayer transition-metal dichalcogenide channel Thin-Film Transistors",

abstract = "We show that multilayered transition-metal dichalcogenides such as multilayer MoS2 present a compelling case for Thin-Film Transistors (TFTs) for large-area display technology. Through a combined structural, optical, and electronic characterization of multilayer MoS2 TFTs, supported by density-functional theory based bandstructure calculations, we show the inherently attractive properties of these materials for such applications. We find that the current modulation of such devices is high, the current saturation is robust, normally-off operation is feasible, effective field-effect mobility at RT exceeds 100 cm2/V.s, and the channel can be operated in both accumulation and inversion modes. These properties make multilayer MoS2 more feasible than single layer versions to maintain processing robustness.",

author = "Kim, \{Eok Su\} and Sunkook Kim and Lee, \{Yun Sung\} and Lee, \{Sang Yoon\} and Sunhee Lee and Woong Choi and Hartwin Peelaers and \{Van De Walle\}, \{Chris G.\} and Hwang, \{Wan Sik\} and Thomas Kosel and Debdeep Jena",

year = "2012",

doi = "10.1109/IEDM.2012.6478985",

language = "English",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "5.5.1--5.5.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Kim, ES, Kim, S, Lee, YS, Lee, SY, Lee, S, Choi, W, Peelaers, H, Van De Walle, CG, Hwang, WS, Kosel, T & Jena, D 2012, Multilayer transition-metal dichalcogenide channel Thin-Film Transistors. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6478985, Technical Digest - International Electron Devices Meeting, IEDM, pp. 5.5.1-5.5.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 10/12/12. https://doi.org/10.1109/IEDM.2012.6478985

Multilayer transition-metal dichalcogenide channel Thin-Film Transistors. / Kim, Eok Su; Kim, Sunkook; Lee, Yun Sung et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 5.5.1-5.5.4 6478985 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Multilayer transition-metal dichalcogenide channel Thin-Film Transistors

AU - Kim, Eok Su

AU - Kim, Sunkook

AU - Lee, Yun Sung

AU - Lee, Sang Yoon

AU - Lee, Sunhee

AU - Choi, Woong

AU - Peelaers, Hartwin

AU - Van De Walle, Chris G.

AU - Hwang, Wan Sik

AU - Kosel, Thomas

AU - Jena, Debdeep

PY - 2012

Y1 - 2012

N2 - We show that multilayered transition-metal dichalcogenides such as multilayer MoS2 present a compelling case for Thin-Film Transistors (TFTs) for large-area display technology. Through a combined structural, optical, and electronic characterization of multilayer MoS2 TFTs, supported by density-functional theory based bandstructure calculations, we show the inherently attractive properties of these materials for such applications. We find that the current modulation of such devices is high, the current saturation is robust, normally-off operation is feasible, effective field-effect mobility at RT exceeds 100 cm2/V.s, and the channel can be operated in both accumulation and inversion modes. These properties make multilayer MoS2 more feasible than single layer versions to maintain processing robustness.

AB - We show that multilayered transition-metal dichalcogenides such as multilayer MoS2 present a compelling case for Thin-Film Transistors (TFTs) for large-area display technology. Through a combined structural, optical, and electronic characterization of multilayer MoS2 TFTs, supported by density-functional theory based bandstructure calculations, we show the inherently attractive properties of these materials for such applications. We find that the current modulation of such devices is high, the current saturation is robust, normally-off operation is feasible, effective field-effect mobility at RT exceeds 100 cm2/V.s, and the channel can be operated in both accumulation and inversion modes. These properties make multilayer MoS2 more feasible than single layer versions to maintain processing robustness.

UR - https://www.scopus.com/pages/publications/84876104983

U2 - 10.1109/IEDM.2012.6478985

DO - 10.1109/IEDM.2012.6478985

M3 - Conference contribution

AN - SCOPUS:84876104983

SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 5.5.1-5.5.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -

Multilayer transition-metal dichalcogenide channel Thin-Film Transistors

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this