Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays

Nuo Xu; Jing Wang; Yexin Deng; Yang Lu; Bo Fu; Woosung Choi; Udit Monga; Jongwook Jeon; Jongchol Kim; Keun Ho Lee; Eun Seung Jung

doi:10.1109/IEDM.2016.7838371

Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays

Nuo Xu
, Jing Wang
, Yexin Deng
, Yang Lu
, Bo Fu
, Woosung Choi
, Udit Monga
, Jongwook Jeon
, Jongchol Kim
, Keun Ho Lee
, Eun Seung Jung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

A novel compact model is developed by coupling comprehensive physical equations from electrical, thermal and phase-transition domains in order to capture their correlations that exist in GeSeTe (GST) device physics. Several non-ideal effects during GST-based memory cell operations have been studied with particular focus on cell Read/Write margins and reliability issues. Finally, large-scale 3-D cross-point memory array circuits have been simulated with developed physics-based models to further explore the design constraints.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	7.7.1-7.7.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838371
State	Published - 31 Jan 2017
Externally published	Yes
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

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10.1109/IEDM.2016.7838371

Cite this

Xu, N., Wang, J., Deng, Y., Lu, Y., Fu, B., Choi, W., Monga, U., Jeon, J., Kim, J., Lee, K. H., & Jung, E. S. (2017). Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 7.7.1-7.7.4). Article 7838371 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838371

Xu, Nuo ; Wang, Jing ; Deng, Yexin et al. / Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 7.7.1-7.7.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{168906c249b84b1289f7ec841930b9c3,

title = "Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays",

abstract = "A novel compact model is developed by coupling comprehensive physical equations from electrical, thermal and phase-transition domains in order to capture their correlations that exist in GeSeTe (GST) device physics. Several non-ideal effects during GST-based memory cell operations have been studied with particular focus on cell Read/Write margins and reliability issues. Finally, large-scale 3-D cross-point memory array circuits have been simulated with developed physics-based models to further explore the design constraints.",

author = "Nuo Xu and Jing Wang and Yexin Deng and Yang Lu and Bo Fu and Woosung Choi and Udit Monga and Jongwook Jeon and Jongchol Kim and Lee, \{Keun Ho\} and Jung, \{Eun Seung\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838371",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "7.7.1--7.7.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

}

Xu, N, Wang, J, Deng, Y, Lu, Y, Fu, B, Choi, W, Monga, U, Jeon, J, Kim, J, Lee, KH & Jung, ES 2017, Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838371, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 7.7.1-7.7.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838371

Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays. / Xu, Nuo; Wang, Jing; Deng, Yexin et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 7.7.1-7.7.4 7838371 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays

AU - Xu, Nuo

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AU - Deng, Yexin

AU - Lu, Yang

AU - Fu, Bo

AU - Choi, Woosung

AU - Monga, Udit

AU - Jeon, Jongwook

AU - Kim, Jongchol

AU - Lee, Keun Ho

AU - Jung, Eun Seung

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N2 - A novel compact model is developed by coupling comprehensive physical equations from electrical, thermal and phase-transition domains in order to capture their correlations that exist in GeSeTe (GST) device physics. Several non-ideal effects during GST-based memory cell operations have been studied with particular focus on cell Read/Write margins and reliability issues. Finally, large-scale 3-D cross-point memory array circuits have been simulated with developed physics-based models to further explore the design constraints.

AB - A novel compact model is developed by coupling comprehensive physical equations from electrical, thermal and phase-transition domains in order to capture their correlations that exist in GeSeTe (GST) device physics. Several non-ideal effects during GST-based memory cell operations have been studied with particular focus on cell Read/Write margins and reliability issues. Finally, large-scale 3-D cross-point memory array circuits have been simulated with developed physics-based models to further explore the design constraints.

UR - https://www.scopus.com/pages/publications/85014480488

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M3 - Conference contribution

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T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

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ER -

Xu N, Wang J, Deng Y, Lu Y, Fu B, Choi W et al. Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 7.7.1-7.7.4. 7838371. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838371

Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays

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