MOS characteristics of ultra thin rapid thermal CVD ZrO2 and Zr silicate gate dielectrics

C. H. Lee; H. F. Luan; W. P. Bai; S. J. Lee; T. S. Jeon; Y. Senzaki; D. Roberts; D. L. Kwong

MOS characteristics of ultra thin rapid thermal CVD ZrO₂ and Zr silicate gate dielectrics

C. H. Lee
, H. F. Luan
, W. P. Bai
, S. J. Lee
, T. S. Jeon
, Y. Senzaki
, D. Roberts
, D. L. Kwong

University of Texas at Austin

Research output: Contribution to journal › Conference article › peer-review

74 Scopus citations

Abstract

In this paper, we report MOS characteristics of ultra thin, high quality CVD ZrO₂ and Zr silicate (Zr₂₇Si₁₀O₆₃) gate dielectrics deposited on Si substrates by in-situ rapid thermal processing. These high-K gate dielectrics show excellent equivalent oxide thickness (EOT) of 8.9Å (ZrO₂) and 9.6Å (Zr₂₇Si₁₀O₆₃) with extremely low leakage current of 20mA/cm² and 23mA/cm² @Vg=-1V, respectively. The thermal stability of ZrO₂/Si as well as the poly-Si/ZrO₂ interfaces are examined using in-situ XPS. We also investigate the conduction mechanisms and long-term reliability in these gate stacks. In addition, the effects of various gate electrode materials (Al/TiN, poly-SiGe, and poly-Si) on the electrical properties of gate stacks are studied. Finally, we also study the boron diffusion behaviors in p⁺-poly-Si PMOS.

Original language	English
Pages (from-to)	27-30
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 2000
Externally published	Yes
Event	2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 10 Dec 2000 → 13 Dec 2000

Cite this

@article{547484cfbc6b479cb0cde739247563a3,

title = "MOS characteristics of ultra thin rapid thermal CVD ZrO2 and Zr silicate gate dielectrics",

abstract = "In this paper, we report MOS characteristics of ultra thin, high quality CVD ZrO2 and Zr silicate (Zr27Si10O63) gate dielectrics deposited on Si substrates by in-situ rapid thermal processing. These high-K gate dielectrics show excellent equivalent oxide thickness (EOT) of 8.9{\AA} (ZrO2) and 9.6{\AA} (Zr27Si10O63) with extremely low leakage current of 20mA/cm2 and 23mA/cm2 @Vg=-1V, respectively. The thermal stability of ZrO2/Si as well as the poly-Si/ZrO2 interfaces are examined using in-situ XPS. We also investigate the conduction mechanisms and long-term reliability in these gate stacks. In addition, the effects of various gate electrode materials (Al/TiN, poly-SiGe, and poly-Si) on the electrical properties of gate stacks are studied. Finally, we also study the boron diffusion behaviors in p+-poly-Si PMOS.",

author = "Lee, \{C. H.\} and Luan, \{H. F.\} and Bai, \{W. P.\} and Lee, \{S. J.\} and Jeon, \{T. S.\} and Y. Senzaki and D. Roberts and Kwong, \{D. L.\}",

year = "2000",

language = "English",

pages = "27--30",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 IEEE International Electron Devices Meeting ; Conference date: 10-12-2000 Through 13-12-2000",

}

TY - JOUR

T1 - MOS characteristics of ultra thin rapid thermal CVD ZrO2 and Zr silicate gate dielectrics

AU - Lee, C. H.

AU - Luan, H. F.

AU - Bai, W. P.

AU - Lee, S. J.

AU - Jeon, T. S.

AU - Senzaki, Y.

AU - Roberts, D.

AU - Kwong, D. L.

PY - 2000

Y1 - 2000

N2 - In this paper, we report MOS characteristics of ultra thin, high quality CVD ZrO2 and Zr silicate (Zr27Si10O63) gate dielectrics deposited on Si substrates by in-situ rapid thermal processing. These high-K gate dielectrics show excellent equivalent oxide thickness (EOT) of 8.9Å (ZrO2) and 9.6Å (Zr27Si10O63) with extremely low leakage current of 20mA/cm2 and 23mA/cm2 @Vg=-1V, respectively. The thermal stability of ZrO2/Si as well as the poly-Si/ZrO2 interfaces are examined using in-situ XPS. We also investigate the conduction mechanisms and long-term reliability in these gate stacks. In addition, the effects of various gate electrode materials (Al/TiN, poly-SiGe, and poly-Si) on the electrical properties of gate stacks are studied. Finally, we also study the boron diffusion behaviors in p+-poly-Si PMOS.

AB - In this paper, we report MOS characteristics of ultra thin, high quality CVD ZrO2 and Zr silicate (Zr27Si10O63) gate dielectrics deposited on Si substrates by in-situ rapid thermal processing. These high-K gate dielectrics show excellent equivalent oxide thickness (EOT) of 8.9Å (ZrO2) and 9.6Å (Zr27Si10O63) with extremely low leakage current of 20mA/cm2 and 23mA/cm2 @Vg=-1V, respectively. The thermal stability of ZrO2/Si as well as the poly-Si/ZrO2 interfaces are examined using in-situ XPS. We also investigate the conduction mechanisms and long-term reliability in these gate stacks. In addition, the effects of various gate electrode materials (Al/TiN, poly-SiGe, and poly-Si) on the electrical properties of gate stacks are studied. Finally, we also study the boron diffusion behaviors in p+-poly-Si PMOS.

UR - https://www.scopus.com/pages/publications/0034453391

M3 - Conference article

AN - SCOPUS:0034453391

SN - 0163-1918

SP - 27

EP - 30

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2000 IEEE International Electron Devices Meeting

Y2 - 10 December 2000 through 13 December 2000

ER -

MOS characteristics of ultra thin rapid thermal CVD ZrO₂ and Zr silicate gate dielectrics

Abstract

Other files and links

Fingerprint

Cite this