TY - GEN
T1 - Monolithically patterned high mobility solution-processed metal-oxide TFTs with metallic capping layers
AU - Kim, Kyung Tae
AU - Kim, Jae Hyun
AU - Jang, Il Wan
AU - Jo, Chan Ho
AU - Kim, Jaekyun
AU - Kim, Yong Hoon
AU - Park, Sung Kyu
PY - 2014
Y1 - 2014
N2 - Amorphous indium gallium zinc oxide(IGZO) based thin film transistors(TFTs) have been widely studied due to their good electrical properties such as optical transparent and field effect mobility. The demand for low-cost process of thin film devices has needed solution processed metal oxide TFTs. Although many effective ways of fabricating soluble metal oxide TFTs have been investigated1, there is still the necessity of increasing field effect mobility of TFTs. As a one way of mobility improvement, low work function metals(Ca, Ti) were used as passivation in terms of capping layer on top of the IGZO active layer2,3. The metal capping method has obvious several advantages, but we expect the additional process cost due to a step of patterning the capping layer. Also, because nature of metals has no transparent characteristics, this pure metal capping method could not available in transparent applications. In this paper, we suggest a real time deposition method of electrodes and capping layer for solution processed IGZO TFTs with maintaining transparency and process cost.
AB - Amorphous indium gallium zinc oxide(IGZO) based thin film transistors(TFTs) have been widely studied due to their good electrical properties such as optical transparent and field effect mobility. The demand for low-cost process of thin film devices has needed solution processed metal oxide TFTs. Although many effective ways of fabricating soluble metal oxide TFTs have been investigated1, there is still the necessity of increasing field effect mobility of TFTs. As a one way of mobility improvement, low work function metals(Ca, Ti) were used as passivation in terms of capping layer on top of the IGZO active layer2,3. The metal capping method has obvious several advantages, but we expect the additional process cost due to a step of patterning the capping layer. Also, because nature of metals has no transparent characteristics, this pure metal capping method could not available in transparent applications. In this paper, we suggest a real time deposition method of electrodes and capping layer for solution processed IGZO TFTs with maintaining transparency and process cost.
UR - https://www.scopus.com/pages/publications/84906542038
U2 - 10.1109/DRC.2014.6872335
DO - 10.1109/DRC.2014.6872335
M3 - Conference contribution
AN - SCOPUS:84906542038
SN - 9781479954056
T3 - Device Research Conference - Conference Digest, DRC
SP - 137
EP - 138
BT - 72nd Device Research Conference, DRC 2014 - Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 72nd Device Research Conference, DRC 2014
Y2 - 22 June 2014 through 25 June 2014
ER -