Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge

H. Y. Yu; J. D. Chen; M. F. Li; S. J. Lee; D. L. Kwong; M. Van Dal; J. A. Kittl; A. Lauwers; E. Augendre; S. Kubicek; C. Zhao; H. Bender; B. Brijs; L. Geenen; A. Benedetti; P. Absil; M. Jurczak; S. Biesemans

Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge

H. Y. Yu, J. D. Chen, M. F. Li, S. J. Lee, D. L. Kwong, M. Van Dal, J. A. Kittl, A. Lauwers, E. Augendre, S. Kubicek, C. Zhao, H. Bender, B. Brijs, L. Geenen, A. Benedetti, P. Absil, M. Jurczak, S. Biesemans

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ∼4.72eV) to n-type band-edge (∼4.22eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45nm and beyond in a manufacturable way.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	630-633
Number of pages	4
State	Published - 2005
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 5 Dec 2005 → 7 Dec 2005

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Conference

Conference	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	5/12/05 → 7/12/05

Cite this

Yu, H. Y., Chen, J. D., Li, M. F., Lee, S. J., Kwong, D. L., Van Dal, M., Kittl, J. A., Lauwers, A., Augendre, E., Kubicek, S., Zhao, C., Bender, H., Brijs, B., Geenen, L., Benedetti, A., Absil, P., Jurczak, M., & Biesemans, S. (2005). Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 630-633). Article 1609429 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

@inproceedings{81f8421ee67a4c538150f785c5b1fef3,

title = "Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge",

abstract = "The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ∼4.72eV) to n-type band-edge (∼4.22eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45nm and beyond in a manufacturable way.",

author = "Yu, \{H. Y.\} and Chen, \{J. D.\} and Li, \{M. F.\} and Lee, \{S. J.\} and Kwong, \{D. L.\} and \{Van Dal\}, M. and Kittl, \{J. A.\} and A. Lauwers and E. Augendre and S. Kubicek and C. Zhao and H. Bender and B. Brijs and L. Geenen and A. Benedetti and P. Absil and M. Jurczak and S. Biesemans",

year = "2005",

language = "English",

isbn = "078039268X",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "630--633",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

}

Yu, HY, Chen, JD, Li, MF, Lee, SJ, Kwong, DL, Van Dal, M, Kittl, JA, Lauwers, A, Augendre, E, Kubicek, S, Zhao, C, Bender, H, Brijs, B, Geenen, L, Benedetti, A, Absil, P, Jurczak, M & Biesemans, S 2005, Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609429, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 630-633, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 5/12/05.

Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge. / Yu, H. Y.; Chen, J. D.; Li, M. F. et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 630-633 1609429 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Modulation of the Ni FUSI workfunction by Yb doping

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

AU - Yu, H. Y.

AU - Chen, J. D.

AU - Li, M. F.

AU - Lee, S. J.

AU - Kwong, D. L.

AU - Van Dal, M.

AU - Kittl, J. A.

AU - Lauwers, A.

AU - Augendre, E.

AU - Kubicek, S.

AU - Zhao, C.

AU - Bender, H.

AU - Brijs, B.

AU - Geenen, L.

AU - Benedetti, A.

AU - Absil, P.

AU - Jurczak, M.

AU - Biesemans, S.

PY - 2005

Y1 - 2005

N2 - The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ∼4.72eV) to n-type band-edge (∼4.22eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45nm and beyond in a manufacturable way.

AB - The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ∼4.72eV) to n-type band-edge (∼4.22eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45nm and beyond in a manufacturable way.

UR - https://www.scopus.com/pages/publications/33847754260

M3 - Conference contribution

AN - SCOPUS:33847754260

SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 630

EP - 633

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

Y2 - 5 December 2005 through 7 December 2005

ER -

Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge

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