Modified Zinc Magnesium Oxide for Optimal Charge-Injection Balance in InP Quantum Dot Light-Emitting Diodes

Dongbeom Heo; Jun Hyuk Chang; Doyoon Shin; Jeonghun Kwak; Wanki Bae; Hyunho Lee

doi:10.1002/adom.202202256

Modified Zinc Magnesium Oxide for Optimal Charge-Injection Balance in InP Quantum Dot Light-Emitting Diodes

Dongbeom Heo
, Jun Hyuk Chang
, Doyoon Shin
, Jeonghun Kwak
, Wanki Bae
, Hyunho Lee

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Balanced charge injection into the emissive layer is a prerequisite for achieving highly efficient quantum dot light-emitting diodes (QLEDs). The similar energy distribution of charge transport layers and indium phosphide (InP) quantum dots (QDs) facilitates excess electron injection to the InP QD layer. In this study, magnesium-doped ZnO nanoparticles (ZMO NPs) are modified to suppress the electron injection to the InP QD layer. Particularly, hydroxyl groups are effectively replaced by electrically stable states through the passivation of ZMO NPs, retarding electron injection through the ZMO NP layer. The modified ZMO-NP-based InP QLEDs exhibit a maximum external quantum efficiency of 9.6% with a substantially enhanced operational lifetime compared with that of devices made with unmodified ZMO NPs.

Original language	English
Article number	2202256
Journal	Advanced Optical Materials
Volume	11
Issue number	10
DOIs	https://doi.org/10.1002/adom.202202256
State	Published - 19 May 2023
Externally published	Yes

Keywords

charge balance
InP
quantum dot light-emitting diodes
zinc magnesium oxide

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10.1002/adom.202202256

Cite this

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abstract = "Balanced charge injection into the emissive layer is a prerequisite for achieving highly efficient quantum dot light-emitting diodes (QLEDs). The similar energy distribution of charge transport layers and indium phosphide (InP) quantum dots (QDs) facilitates excess electron injection to the InP QD layer. In this study, magnesium-doped ZnO nanoparticles (ZMO NPs) are modified to suppress the electron injection to the InP QD layer. Particularly, hydroxyl groups are effectively replaced by electrically stable states through the passivation of ZMO NPs, retarding electron injection through the ZMO NP layer. The modified ZMO-NP-based InP QLEDs exhibit a maximum external quantum efficiency of 9.6\% with a substantially enhanced operational lifetime compared with that of devices made with unmodified ZMO NPs.",

keywords = "charge balance, InP, quantum dot light-emitting diodes, zinc magnesium oxide",

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AU - Heo, Dongbeom

AU - Chang, Jun Hyuk

AU - Shin, Doyoon

AU - Kwak, Jeonghun

AU - Bae, Wanki

AU - Lee, Hyunho

PY - 2023/5/19

Y1 - 2023/5/19

N2 - Balanced charge injection into the emissive layer is a prerequisite for achieving highly efficient quantum dot light-emitting diodes (QLEDs). The similar energy distribution of charge transport layers and indium phosphide (InP) quantum dots (QDs) facilitates excess electron injection to the InP QD layer. In this study, magnesium-doped ZnO nanoparticles (ZMO NPs) are modified to suppress the electron injection to the InP QD layer. Particularly, hydroxyl groups are effectively replaced by electrically stable states through the passivation of ZMO NPs, retarding electron injection through the ZMO NP layer. The modified ZMO-NP-based InP QLEDs exhibit a maximum external quantum efficiency of 9.6% with a substantially enhanced operational lifetime compared with that of devices made with unmodified ZMO NPs.

AB - Balanced charge injection into the emissive layer is a prerequisite for achieving highly efficient quantum dot light-emitting diodes (QLEDs). The similar energy distribution of charge transport layers and indium phosphide (InP) quantum dots (QDs) facilitates excess electron injection to the InP QD layer. In this study, magnesium-doped ZnO nanoparticles (ZMO NPs) are modified to suppress the electron injection to the InP QD layer. Particularly, hydroxyl groups are effectively replaced by electrically stable states through the passivation of ZMO NPs, retarding electron injection through the ZMO NP layer. The modified ZMO-NP-based InP QLEDs exhibit a maximum external quantum efficiency of 9.6% with a substantially enhanced operational lifetime compared with that of devices made with unmodified ZMO NPs.

KW - charge balance

KW - InP

KW - quantum dot light-emitting diodes

KW - zinc magnesium oxide

UR - https://www.scopus.com/pages/publications/85150589994

U2 - 10.1002/adom.202202256

DO - 10.1002/adom.202202256

M3 - Article

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JO - Advanced Optical Materials

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ER -

Modified Zinc Magnesium Oxide for Optimal Charge-Injection Balance in InP Quantum Dot Light-Emitting Diodes

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Keywords

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