TY - GEN
T1 - Modeling of Channel Current in Sub-threshold Region for Poly-Si based Macaroni Structure in 3D NAND Flash Memories
AU - Kim, Juhyun
AU - Myeong, Ilho
AU - Kim, Minsoo
AU - Kim, Sungbak
AU - Kang, Myounggon
AU - Jeon, Jongwook
AU - Shin, Hyungcheol
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/3
Y1 - 2019/3
N2 - In this paper, sub-threshold region I-V model for poly-Si based macaroni structure in 3D NAND Flash memories is presented. The model is based on analytical I-V solution for macaroni structure which was previously developed for single crystal-Si channel. Starting from the existing model, the characteristics of polysilicon, such as sub-threshold slope (S.S.) and mobility degradation and drain induced barrier lowering (DIBL), were added. Moreover, we considered shift in I-V curve due to different distribution of traps for each cell.
AB - In this paper, sub-threshold region I-V model for poly-Si based macaroni structure in 3D NAND Flash memories is presented. The model is based on analytical I-V solution for macaroni structure which was previously developed for single crystal-Si channel. Starting from the existing model, the characteristics of polysilicon, such as sub-threshold slope (S.S.) and mobility degradation and drain induced barrier lowering (DIBL), were added. Moreover, we considered shift in I-V curve due to different distribution of traps for each cell.
KW - macaroni structure
KW - mobility and DIBL
KW - polysilicon characteristics
KW - S.S.
UR - https://www.scopus.com/pages/publications/85067825646
U2 - 10.1109/EDTM.2019.8731334
DO - 10.1109/EDTM.2019.8731334
M3 - Conference contribution
AN - SCOPUS:85067825646
T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
SP - 200
EP - 202
BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Y2 - 12 March 2019 through 15 March 2019
ER -