Minimizing Trap Charge Density towards an Ideal Diode in Graphene-Silicon Schottky Solar Cell

Photovoltaic device performance of graphene/n-Si Schottky diodes is largely affected by inhomogeneous oxide formation at the interface that suppresses the tunneling current of injected and photoexcited charges. The accumulated trap charges at low current induce charge recombination at the interface and degrade the ideality factor of the diode and the fill factor (FF) of the solar cell. This consequently gives rise to a nonlinear current-voltage (I-V) feature in solar cells, commonly known as an S-shaped kink, which can be engineered by optimizing the interface barrier thickness or by increasing the carrier mobility. Here, we present chemical and electrochemical doping methods to increase the conductivity of graphene that transforms nonlinear kink photodiodes with a low FF and solar cell efficiency towards trap-free linear photovoltaic I-V. Space-charge-limited-current manifested Ohmic I-V diode behavior with enhanced conductance in graphene by injecting homogeneous ionic liquid; confirming the significant reduction of trap charge density. This was further congruent with the disappearance of the nonlinear kink in photodiodes with a high FF and nearly ideal diodes. The solar cell efficiency obtained with our strategy is around 13.6% and suggests possibilities to reach the theoretical limit of 19% by tailoring parameters such as conductance of graphene, carrier density of Si, and oxidation of the interfaces.