Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas

D. R. Hang; J. R. Juang; Tsai Yu Huang; C. T. Liang; W. K. Hung; Y. F. Chen; Gil Ho Kim; Y. Lee; Jae Hoon Lee; Jung Hee Lee; C. F. Huang

doi:10.1016/j.physe.2003.12.074

Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas

D. R. Hang
, J. R. Juang
, Tsai Yu Huang
, C. T. Liang
, W. K. Hung
, Y. F. Chen
, Gil Ho Kim
, Y. Lee
, Jae Hoon Lee
, Jung Hee Lee
, C. F. Huang

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

We report the drastic enhancement of Shubnikov-de Haas (SdH) oscillations observed in a GaN/AlGaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature are investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in a GaN/AlGaN heterostructure. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements.

Original language	English
Pages (from-to)	578-581
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	22
Issue number	1-3
DOIs	https://doi.org/10.1016/j.physe.2003.12.074
State	Published - Apr 2004
Event	15th International Conference on ELectronic Propreties - Nara, Japan Duration: 14 Jul 2003 → 18 Jul 2003

Keywords

GaN
Microwave
Shubnikov-de Hass

Access to Document

10.1016/j.physe.2003.12.074

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title = "Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas",

abstract = "We report the drastic enhancement of Shubnikov-de Haas (SdH) oscillations observed in a GaN/AlGaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature are investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in a GaN/AlGaN heterostructure. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements.",

keywords = "GaN, Microwave, Shubnikov-de Hass",

author = "Hang, \{D. R.\} and Juang, \{J. R.\} and Huang, \{Tsai Yu\} and Liang, \{C. T.\} and Hung, \{W. K.\} and Chen, \{Y. F.\} and Kim, \{Gil Ho\} and Y. Lee and Lee, \{Jae Hoon\} and Lee, \{Jung Hee\} and Huang, \{C. F.\}",

year = "2004",

month = apr,

doi = "10.1016/j.physe.2003.12.074",

language = "English",

volume = "22",

pages = "578--581",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-3",

note = "15th International Conference on ELectronic Propreties ; Conference date: 14-07-2003 Through 18-07-2003",

}

TY - JOUR

T1 - Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas

AU - Hang, D. R.

AU - Juang, J. R.

AU - Huang, Tsai Yu

AU - Liang, C. T.

AU - Hung, W. K.

AU - Chen, Y. F.

AU - Kim, Gil Ho

AU - Lee, Y.

AU - Lee, Jae Hoon

AU - Lee, Jung Hee

AU - Huang, C. F.

PY - 2004/4

Y1 - 2004/4

N2 - We report the drastic enhancement of Shubnikov-de Haas (SdH) oscillations observed in a GaN/AlGaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature are investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in a GaN/AlGaN heterostructure. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements.

AB - We report the drastic enhancement of Shubnikov-de Haas (SdH) oscillations observed in a GaN/AlGaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature are investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in a GaN/AlGaN heterostructure. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements.

KW - GaN

KW - Microwave

KW - Shubnikov-de Hass

UR - https://www.scopus.com/pages/publications/11144358347

U2 - 10.1016/j.physe.2003.12.074

DO - 10.1016/j.physe.2003.12.074

M3 - Conference article

AN - SCOPUS:11144358347

SN - 1386-9477

VL - 22

SP - 578

EP - 581

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

T2 - 15th International Conference on ELectronic Propreties

Y2 - 14 July 2003 through 18 July 2003

ER -

Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas

Abstract

Keywords

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