Abstract
The microstructural, optical and magnetic properties of Mn-implanted p-type GaN were investigated. Dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequently annealing. The Ga-Mn magnetic phases contributing to the ferromagnetic property were produced after annealing Mn-implanted p-type GaN below 800°C.
| Original language | English |
|---|---|
| Pages (from-to) | 9024-9029 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 93 |
| Issue number | 11 |
| DOIs | |
| State | Published - 1 Jun 2003 |
| Externally published | Yes |