Microstructural investigation and magnetic properties of p-type GaN implanted with Mn+ ions

J. M. Baik; J. K. Kim; H. W. Jang; Y. Shon; T. W. Kang; J. L. Lee

doi:10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4

Microstructural investigation and magnetic properties of p-type GaN implanted with Mn⁺ ions

J. M. Baik, J. K. Kim, H. W. Jang, Y. Shon, T. W. Kang, J. L. Lee

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6 Scopus citations

Abstract

In p-type GaN implanted with 5 × 10¹⁶ cm^-2 dose of Mn⁺ ions, magnetization data after annealing showed ferromagnetic behavior at 10 K. The ferromagnetic signal for the sample annealed at 800 °C was stronger than the one at 900 °C, because of the predominant reaction of Mn with N atoms at 900 °C and the increase of the electron concentration with increasing annealing temperature. This suggests that ferromagnetism in Mn-implanted p-type GaN can be enhanced by optimising annealing temperature (< 900 °C).

Original language	English
Pages (from-to)	943-946
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	234
Issue number	3
DOIs	https://doi.org/10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4
State	Published - Dec 2002
Externally published	Yes

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10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4

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@article{a85a27f08f5f48a2a82cc7d4f38cb6ca,

title = "Microstructural investigation and magnetic properties of p-type GaN implanted with Mn+ ions",

abstract = "In p-type GaN implanted with 5 × 1016 cm-2 dose of Mn+ ions, magnetization data after annealing showed ferromagnetic behavior at 10 K. The ferromagnetic signal for the sample annealed at 800 °C was stronger than the one at 900 °C, because of the predominant reaction of Mn with N atoms at 900 °C and the increase of the electron concentration with increasing annealing temperature. This suggests that ferromagnetism in Mn-implanted p-type GaN can be enhanced by optimising annealing temperature (< 900 °C).",

author = "Baik, \{J. M.\} and Kim, \{J. K.\} and Jang, \{H. W.\} and Y. Shon and Kang, \{T. W.\} and Lee, \{J. L.\}",

year = "2002",

month = dec,

doi = "10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4",

language = "English",

volume = "234",

pages = "943--946",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc",

number = "3",

}

TY - JOUR

T1 - Microstructural investigation and magnetic properties of p-type GaN implanted with Mn+ ions

AU - Baik, J. M.

AU - Kim, J. K.

AU - Jang, H. W.

AU - Shon, Y.

AU - Kang, T. W.

AU - Lee, J. L.

PY - 2002/12

Y1 - 2002/12

N2 - In p-type GaN implanted with 5 × 1016 cm-2 dose of Mn+ ions, magnetization data after annealing showed ferromagnetic behavior at 10 K. The ferromagnetic signal for the sample annealed at 800 °C was stronger than the one at 900 °C, because of the predominant reaction of Mn with N atoms at 900 °C and the increase of the electron concentration with increasing annealing temperature. This suggests that ferromagnetism in Mn-implanted p-type GaN can be enhanced by optimising annealing temperature (< 900 °C).

AB - In p-type GaN implanted with 5 × 1016 cm-2 dose of Mn+ ions, magnetization data after annealing showed ferromagnetic behavior at 10 K. The ferromagnetic signal for the sample annealed at 800 °C was stronger than the one at 900 °C, because of the predominant reaction of Mn with N atoms at 900 °C and the increase of the electron concentration with increasing annealing temperature. This suggests that ferromagnetism in Mn-implanted p-type GaN can be enhanced by optimising annealing temperature (< 900 °C).

UR - https://www.scopus.com/pages/publications/0036926050

U2 - 10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4

DO - 10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4

M3 - Article

AN - SCOPUS:0036926050

SN - 0370-1972

VL - 234

SP - 943

EP - 946

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 3

ER -

Microstructural investigation and magnetic properties of p-type GaN implanted with Mn⁺ ions

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