Abstract
We have investigated the kinetic role of a surfactant in the epitaxial crystal growth of Si/Ge using an ab initio molecular dynamics approach. We find that adsorption and diffusion of an adatom on monohydride Si(001) surface is drastically altered from that on a clean surface in several ways. We particularly emphasize the role of H as a surfactant, and this is further compared to typical group V materials.
| Original language | English |
|---|---|
| Pages (from-to) | 267-272 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 501 |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: 30 Nov 1997 → 4 Dec 1997 |