Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications

Byeong Jae Ahn; Do Young Kim; Jin Su Yoo; Junsin Yi

doi:10.1109/PVSC.2000.916014

Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications

Byeong Jae Ahn
, Do Young Kim
, Jin Su Yoo
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The XRD analysis on CaF2/glass illustrated (220) preferential orientation and showed lattice mismatch less than 0.69% with Si. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300°C by using a CaF2/glass substrate. The μc-Si films exhibited crystallization in (111) and (220) planes, grain size of 700 A, crystalline volume fraction over 65%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4 × 10^-7 S/cm.

Original language	English
Title of host publication	Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	841-844
Number of pages	4
ISBN (Electronic)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.916014
State	Published - 2000
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 15 Sep 2000 → 22 Sep 2000

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2000-January
ISSN (Print)	0160-8371

Conference

Conference	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	15/09/00 → 22/09/00

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/PVSC.2000.916014

Cite this

Ahn, B. J., Kim, D. Y., Yoo, J. S., & Yi, J. (2000). Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications. In Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000 (pp. 841-844). Article 916014 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2000-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.916014

Ahn, Byeong Jae ; Kim, Do Young ; Yoo, Jin Su et al. / Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications. Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 841-844 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{4ed035ee85b446b883ec125fcab13759,

title = "Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications",

abstract = "Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The XRD analysis on CaF2/glass illustrated (220) preferential orientation and showed lattice mismatch less than 0.69\% with Si. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300°C by using a CaF2/glass substrate. The μc-Si films exhibited crystallization in (111) and (220) planes, grain size of 700 A, crystalline volume fraction over 65\%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4 × 10-7 S/cm.",

author = "Ahn, \{Byeong Jae\} and Kim, \{Do Young\} and Yoo, \{Jin Su\} and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

year = "2000",

doi = "10.1109/PVSC.2000.916014",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "841--844",

booktitle = "Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000",

}

Ahn, BJ, Kim, DY, Yoo, JS & Yi, J 2000, Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications. in Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000., 916014, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2000-January, Institute of Electrical and Electronics Engineers Inc., pp. 841-844, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 15/09/00. https://doi.org/10.1109/PVSC.2000.916014

Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications. / Ahn, Byeong Jae; Kim, Do Young; Yoo, Jin Su et al.
Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 841-844 916014 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2000-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications

AU - Ahn, Byeong Jae

AU - Kim, Do Young

AU - Yoo, Jin Su

AU - Yi, Junsin

PY - 2000

Y1 - 2000

N2 - Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The XRD analysis on CaF2/glass illustrated (220) preferential orientation and showed lattice mismatch less than 0.69% with Si. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300°C by using a CaF2/glass substrate. The μc-Si films exhibited crystallization in (111) and (220) planes, grain size of 700 A, crystalline volume fraction over 65%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4 × 10-7 S/cm.

AB - Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The XRD analysis on CaF2/glass illustrated (220) preferential orientation and showed lattice mismatch less than 0.69% with Si. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300°C by using a CaF2/glass substrate. The μc-Si films exhibited crystallization in (111) and (220) planes, grain size of 700 A, crystalline volume fraction over 65%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4 × 10-7 S/cm.

UR - https://www.scopus.com/pages/publications/84949552739

U2 - 10.1109/PVSC.2000.916014

DO - 10.1109/PVSC.2000.916014

M3 - Conference contribution

AN - SCOPUS:84949552739

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 841

EP - 844

BT - Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000

Y2 - 15 September 2000 through 22 September 2000

ER -

Ahn BJ, Kim DY, Yoo JS, Yi J. Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications. In Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 841-844. 916014. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2000.916014

Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications

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