Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces

Gil Ho Kim; M. Y. Simmons; C. T. Liang; D. A. Ritchie; A. C. Churchill; H. S. Sim; K. J. Chang; G. Ihm; N. Kim

doi:10.1103/PhysRevB.64.165313

Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces

Gil Ho Kim
, M. Y. Simmons
, C. T. Liang
, D. A. Ritchie
, A. C. Churchill
, H. S. Sim
, K. J. Chang
, G. Ihm
, N. Kim

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report low-field magnetoresistance measurements of a two-dimensional electron gas formed in a GaAs quantum well, in which half a monolayer of A1As has been inserted into the center of the well. A large anisotropy is observed in both the mobility and the low field magnetoresistance in the orthogonal [110] and [110] directions. We describe a method of using the anisotropic low field magnetoresistance to calculate the magnitude of the effective potential of the AlAs submonolayer at the GaAs/AlGaAs heterointerface.

Original language	English
Article number	165313
Pages (from-to)	1653131-1653135
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.64.165313
State	Published - 15 Oct 2001
Externally published	Yes

Access to Document

10.1103/PhysRevB.64.165313

Cite this

@article{1ca2758c4ba844cbba7f5fd81d8cae8a,

title = "Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces",

abstract = "We report low-field magnetoresistance measurements of a two-dimensional electron gas formed in a GaAs quantum well, in which half a monolayer of A1As has been inserted into the center of the well. A large anisotropy is observed in both the mobility and the low field magnetoresistance in the orthogonal [110] and [110] directions. We describe a method of using the anisotropic low field magnetoresistance to calculate the magnitude of the effective potential of the AlAs submonolayer at the GaAs/AlGaAs heterointerface.",

author = "Kim, \{Gil Ho\} and Simmons, \{M. Y.\} and Liang, \{C. T.\} and Ritchie, \{D. A.\} and Churchill, \{A. C.\} and Sim, \{H. S.\} and Chang, \{K. J.\} and G. Ihm and N. Kim",

year = "2001",

month = oct,

day = "15",

doi = "10.1103/PhysRevB.64.165313",

language = "English",

volume = "64",

pages = "1653131--1653135",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "16",

}

TY - JOUR

T1 - Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces

AU - Kim, Gil Ho

AU - Simmons, M. Y.

AU - Liang, C. T.

AU - Ritchie, D. A.

AU - Churchill, A. C.

AU - Sim, H. S.

AU - Chang, K. J.

AU - Ihm, G.

AU - Kim, N.

PY - 2001/10/15

Y1 - 2001/10/15

N2 - We report low-field magnetoresistance measurements of a two-dimensional electron gas formed in a GaAs quantum well, in which half a monolayer of A1As has been inserted into the center of the well. A large anisotropy is observed in both the mobility and the low field magnetoresistance in the orthogonal [110] and [110] directions. We describe a method of using the anisotropic low field magnetoresistance to calculate the magnitude of the effective potential of the AlAs submonolayer at the GaAs/AlGaAs heterointerface.

AB - We report low-field magnetoresistance measurements of a two-dimensional electron gas formed in a GaAs quantum well, in which half a monolayer of A1As has been inserted into the center of the well. A large anisotropy is observed in both the mobility and the low field magnetoresistance in the orthogonal [110] and [110] directions. We describe a method of using the anisotropic low field magnetoresistance to calculate the magnitude of the effective potential of the AlAs submonolayer at the GaAs/AlGaAs heterointerface.

UR - https://www.scopus.com/pages/publications/0035886592

U2 - 10.1103/PhysRevB.64.165313

DO - 10.1103/PhysRevB.64.165313

M3 - Article

AN - SCOPUS:0035886592

SN - 1098-0121

VL - 64

SP - 1653131

EP - 1653135

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

M1 - 165313

ER -

Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces

Abstract

Access to Document

Other files and links

Fingerprint

Cite this