Metal-insulator transition in low dimensional La0.75Sr 0.25VO3 thin films

Tran M. Dao; Partha S. Mondal; Y. Takamura; E. Arenholz; Jaichan Lee

doi:10.1063/1.3638065

Metal-insulator transition in low dimensional La_0.75Sr _0.25VO₃ thin films

Tran M. Dao
, Partha S. Mondal
, Y. Takamura
, E. Arenholz
, Jaichan Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La_0.75Sr_0.25VO₃ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

Original language	English
Article number	112111
Journal	Applied Physics Letters
Volume	99
Issue number	11
DOIs	https://doi.org/10.1063/1.3638065
State	Published - 12 Sep 2011

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title = "Metal-insulator transition in low dimensional La0.75Sr 0.25VO3 thin films",

abstract = "We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La0.75Sr0.25VO3 films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.",

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AU - Mondal, Partha S.

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AU - Arenholz, E.

AU - Lee, Jaichan

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N2 - We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La0.75Sr0.25VO3 films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

AB - We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La0.75Sr0.25VO3 films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

UR - https://www.scopus.com/pages/publications/80053195769

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DO - 10.1063/1.3638065

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Metal-insulator transition in low dimensional La_0.75Sr _0.25VO₃ thin films

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