Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystal

Bum Jun Kim, Byung Joo Jeong, Seungbae Oh, Sudong Chae, Kyung Hwan Choi, Tuqeer Nasir, Sang Hoon Lee, Kwan Woo Kim, Hyung Kyu Lim, Ik Jun Choi, Linlin Chi, Sang Hwa Hyun, Hak Ki Yu, Jae Hyun Lee, Jae Young Choi

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.

Original languageEnglish
Pages (from-to)37724-37728
Number of pages5
JournalRSC Advances
Volume8
Issue number66
DOIs
StatePublished - 2018

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