Mechanical and electrical properties of boron-oxygen-nitrogen film as buffer layer

G. C. Chen; B. Li; Y. M. Tong; F. X. Lu; J. H. Boo

doi:10.4028/0-87849-410-3.2586

Mechanical and electrical properties of boron-oxygen-nitrogen film as buffer layer

G. C. Chen
, B. Li
, Y. M. Tong
, F. X. Lu
, J. H. Boo

Department of Chemistry

University of Science and Technology Beijing

Research output: Contribution to journal › Article › peer-review

Abstract

BON film was fabricated as buffer layer by radio frequency plasma enhanced metal-organic chemical vapor deposition with 100 kHz frequency and trimethyl borate precursor. The typical binding energy of each element is 191.5 eV of B_1s, 399.4 eV of N_1s, and 531.2 eV of O_1s, in the films detected by XPS. HRTEM showed the film contained amorphous composition and nano-sized crystalline particles. Electrical properties of films were characterized by I-V curve. The order-magnitude of electric conductivity was measured as several tens (Ω·cm)^-1. The hardness of BON film was ∼ 10 GPa.

Original language	English
Pages (from-to)	2586-2588
Number of pages	3
Journal	Key Engineering Materials
Volume	336-338 III
DOIs	https://doi.org/10.4028/0-87849-410-3.2586
State	Published - 2007

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SDG 7 Affordable and Clean Energy

Keywords

Boron-oxygen-nitrogen
Layer
MOCVD
Plasma

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10.4028/0-87849-410-3.2586

Cite this

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title = "Mechanical and electrical properties of boron-oxygen-nitrogen film as buffer layer",

abstract = "BON film was fabricated as buffer layer by radio frequency plasma enhanced metal-organic chemical vapor deposition with 100 kHz frequency and trimethyl borate precursor. The typical binding energy of each element is 191.5 eV of B1s, 399.4 eV of N1s, and 531.2 eV of O1s, in the films detected by XPS. HRTEM showed the film contained amorphous composition and nano-sized crystalline particles. Electrical properties of films were characterized by I-V curve. The order-magnitude of electric conductivity was measured as several tens (Ω·cm)-1. The hardness of BON film was ∼ 10 GPa.",

keywords = "Boron-oxygen-nitrogen, Layer, MOCVD, Plasma",

author = "Chen, \{G. C.\} and B. Li and Tong, \{Y. M.\} and Lu, \{F. X.\} and Boo, \{J. H.\}",

year = "2007",

doi = "10.4028/0-87849-410-3.2586",

language = "English",

volume = "336-338 III",

pages = "2586--2588",

journal = "Key Engineering Materials",

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T1 - Mechanical and electrical properties of boron-oxygen-nitrogen film as buffer layer

AU - Chen, G. C.

AU - Li, B.

AU - Tong, Y. M.

AU - Lu, F. X.

AU - Boo, J. H.

PY - 2007

Y1 - 2007

N2 - BON film was fabricated as buffer layer by radio frequency plasma enhanced metal-organic chemical vapor deposition with 100 kHz frequency and trimethyl borate precursor. The typical binding energy of each element is 191.5 eV of B1s, 399.4 eV of N1s, and 531.2 eV of O1s, in the films detected by XPS. HRTEM showed the film contained amorphous composition and nano-sized crystalline particles. Electrical properties of films were characterized by I-V curve. The order-magnitude of electric conductivity was measured as several tens (Ω·cm)-1. The hardness of BON film was ∼ 10 GPa.

AB - BON film was fabricated as buffer layer by radio frequency plasma enhanced metal-organic chemical vapor deposition with 100 kHz frequency and trimethyl borate precursor. The typical binding energy of each element is 191.5 eV of B1s, 399.4 eV of N1s, and 531.2 eV of O1s, in the films detected by XPS. HRTEM showed the film contained amorphous composition and nano-sized crystalline particles. Electrical properties of films were characterized by I-V curve. The order-magnitude of electric conductivity was measured as several tens (Ω·cm)-1. The hardness of BON film was ∼ 10 GPa.

KW - Boron-oxygen-nitrogen

KW - Layer

KW - MOCVD

KW - Plasma

UR - https://www.scopus.com/pages/publications/33947254036

U2 - 10.4028/0-87849-410-3.2586

DO - 10.4028/0-87849-410-3.2586

M3 - Article

AN - SCOPUS:33947254036

SN - 1013-9826

VL - 336-338 III

SP - 2586

EP - 2588

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Mechanical and electrical properties of boron-oxygen-nitrogen film as buffer layer

Abstract

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Keywords

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