Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation

Bumman Kim; Youngoo Yang; Jeonghyeon Cha; Young Yun Woo; Jaehyok Yi

doi:10.1109/ARFTG.2001.327497

Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation

Bumman Kim
, Youngoo Yang
, Jeonghyeon Cha
, Young Yun Woo
, Jaehyok Yi

Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the downconverted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.

Original language	English
Title of host publication	58th ARFTG Conference Digest Fall 2001
Subtitle of host publication	RF Measurements for a Wireless World, ARFTG Fall 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780356861, 9780780356863
DOIs	https://doi.org/10.1109/ARFTG.2001.327497
State	Published - 2001
Externally published	Yes
Event	58th Automatic RF Techniques Group Conference, ARFTG Fall 2001 - San Diego, United States Duration: 29 Nov 2001 → 30 Nov 2001

Publication series

Name	58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001

Conference

Conference	58th Automatic RF Techniques Group Conference, ARFTG Fall 2001
Country/Territory	United States
City	San Diego
Period	29/11/01 → 30/11/01

Keywords

Bandwidth
Capacitors
Circuits
Dynamic range
High power amplifiers
Phase measurement
Power amplifiers
Power measurement
Signal generators
Thermal resistance

Access to Document

10.1109/ARFTG.2001.327497

Cite this

Kim, B., Yang, Y., Cha, J., Woo, Y. Y., & Yi, J. (2001). Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation. In 58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001 Article 4120200 (58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ARFTG.2001.327497

Kim, Bumman ; Yang, Youngoo ; Cha, Jeonghyeon et al. / Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation. 58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001. Institute of Electrical and Electronics Engineers Inc., 2001. (58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001).

@inproceedings{93c99282aa65424d9c9782d35b7c3ced,

title = "Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation",

abstract = "We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the downconverted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.",

keywords = "Bandwidth, Capacitors, Circuits, Dynamic range, High power amplifiers, Phase measurement, Power amplifiers, Power measurement, Signal generators, Thermal resistance",

author = "Bumman Kim and Youngoo Yang and Jeonghyeon Cha and Woo, \{Young Yun\} and Jaehyok Yi",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 58th Automatic RF Techniques Group Conference, ARFTG Fall 2001 ; Conference date: 29-11-2001 Through 30-11-2001",

year = "2001",

doi = "10.1109/ARFTG.2001.327497",

language = "English",

series = "58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "58th ARFTG Conference Digest Fall 2001",

}

Kim, B, Yang, Y, Cha, J, Woo, YY & Yi, J 2001, Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation. in 58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001., 4120200, 58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001, Institute of Electrical and Electronics Engineers Inc., 58th Automatic RF Techniques Group Conference, ARFTG Fall 2001, San Diego, United States, 29/11/01. https://doi.org/10.1109/ARFTG.2001.327497

Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation. / Kim, Bumman; Yang, Youngoo; Cha, Jeonghyeon et al.
58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001. Institute of Electrical and Electronics Engineers Inc., 2001. 4120200 (58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation

AU - Kim, Bumman

AU - Yang, Youngoo

AU - Cha, Jeonghyeon

AU - Woo, Young Yun

AU - Yi, Jaehyok

PY - 2001

Y1 - 2001

N2 - We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the downconverted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.

AB - We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the downconverted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.

KW - Bandwidth

KW - Capacitors

KW - Circuits

KW - Dynamic range

KW - High power amplifiers

KW - Phase measurement

KW - Power amplifiers

KW - Power measurement

KW - Signal generators

KW - Thermal resistance

UR - https://www.scopus.com/pages/publications/84949685203

U2 - 10.1109/ARFTG.2001.327497

DO - 10.1109/ARFTG.2001.327497

M3 - Conference contribution

AN - SCOPUS:84949685203

T3 - 58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001

BT - 58th ARFTG Conference Digest Fall 2001

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 58th Automatic RF Techniques Group Conference, ARFTG Fall 2001

Y2 - 29 November 2001 through 30 November 2001

ER -

Kim B, Yang Y, Cha J, Woo YY, Yi J. Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation. In 58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001. Institute of Electrical and Electronics Engineers Inc. 2001. 4120200. (58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001). doi: 10.1109/ARFTG.2001.327497

Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation

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Keywords

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