Majority carrier type conversion with floating gates in carbon nanotube transistors

Woo Jong Yu; Bo Ram Kang; Il Ha Lee; Yo Sep Min; Young Hee Lee

doi:10.1002/adma.200900911

Majority carrier type conversion with floating gates in carbon nanotube transistors

Woo Jong Yu
, Bo Ram Kang
, Il Ha Lee
, Yo Sep Min
, Young Hee Lee

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for type conversion from p- to n-type and vice versa of carbon nanotube (CNT) channels. Type conversion from p- to n-type and vice versa for CNT field effect transistors can be realized by changing the polarity of trapped charges (see figure). Figure Presented

Original language	English
Pages (from-to)	4821-4824
Number of pages	4
Journal	Advanced Materials
Volume	21
Issue number	47
DOIs	https://doi.org/10.1002/adma.200900911
State	Published - 18 Dec 2009
Externally published	Yes

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10.1002/adma.200900911

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title = "Majority carrier type conversion with floating gates in carbon nanotube transistors",

abstract = "A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for type conversion from p- to n-type and vice versa of carbon nanotube (CNT) channels. Type conversion from p- to n-type and vice versa for CNT field effect transistors can be realized by changing the polarity of trapped charges (see figure). Figure Presented",

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T1 - Majority carrier type conversion with floating gates in carbon nanotube transistors

AU - Yu, Woo Jong

AU - Kang, Bo Ram

AU - Lee, Il Ha

AU - Min, Yo Sep

AU - Lee, Young Hee

PY - 2009/12/18

Y1 - 2009/12/18

N2 - A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for type conversion from p- to n-type and vice versa of carbon nanotube (CNT) channels. Type conversion from p- to n-type and vice versa for CNT field effect transistors can be realized by changing the polarity of trapped charges (see figure). Figure Presented

AB - A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for type conversion from p- to n-type and vice versa of carbon nanotube (CNT) channels. Type conversion from p- to n-type and vice versa for CNT field effect transistors can be realized by changing the polarity of trapped charges (see figure). Figure Presented

UR - https://www.scopus.com/pages/publications/73949137169

U2 - 10.1002/adma.200900911

DO - 10.1002/adma.200900911

M3 - Article

AN - SCOPUS:73949137169

SN - 0935-9648

VL - 21

SP - 4821

EP - 4824

JO - Advanced Materials

JF - Advanced Materials

IS - 47

ER -

Majority carrier type conversion with floating gates in carbon nanotube transistors

Abstract

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