Magnetic field shape effect on electrical properties of TOLEDs in the deposition of ITO top cathode layer

Han Ki Kim; Kyu Sung Lee; M. J. Keum; K. H. Kim

doi:10.1149/1.2096362

Magnetic field shape effect on electrical properties of TOLEDs in the deposition of ITO top cathode layer

Han Ki Kim, Kyu Sung Lee, M. J. Keum, K. H. Kim

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The effects of magnetic field shape between indium tin oxide (ITO) targets on electrical characteristics of top-emission organic light emitting diodes (TOLEDs) have been investigated. When the top electrode is prepared with ITO using facing target sputtering (FTS) method, it was found that TOLEDs with ITO layers prepared in the diffused plasma mode showed much lower leakage current density (1 × 10^-5 mA/cm² at -6 V) than (1 × 10^-1 mA/cm² at -6 V) of TOLEDs prepared with ITO in the concentrated mode. Even when the ITO film itself had the identical electrical, optical, and structural properties, TOLEDs clearly exhibited different electrical properties based on the plasma mode at which the ITO film was sputtered. This suggests that there is less plasma damage from the bombardment of energetic particles in a diffused plasma mode than in a concentrated plasma mode during the FTS process.

Original language	English
Pages (from-to)	H103-H105
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	12
DOIs	https://doi.org/10.1149/1.2096362
State	Published - 2005
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2096362

Cite this

@article{cf1e1e554af04c4497c0beaea7adcc0e,

title = "Magnetic field shape effect on electrical properties of TOLEDs in the deposition of ITO top cathode layer",

abstract = "The effects of magnetic field shape between indium tin oxide (ITO) targets on electrical characteristics of top-emission organic light emitting diodes (TOLEDs) have been investigated. When the top electrode is prepared with ITO using facing target sputtering (FTS) method, it was found that TOLEDs with ITO layers prepared in the diffused plasma mode showed much lower leakage current density (1 × 10-5 mA/cm2 at -6 V) than (1 × 10-1 mA/cm2 at -6 V) of TOLEDs prepared with ITO in the concentrated mode. Even when the ITO film itself had the identical electrical, optical, and structural properties, TOLEDs clearly exhibited different electrical properties based on the plasma mode at which the ITO film was sputtered. This suggests that there is less plasma damage from the bombardment of energetic particles in a diffused plasma mode than in a concentrated plasma mode during the FTS process.",

author = "Kim, \{Han Ki\} and Lee, \{Kyu Sung\} and Keum, \{M. J.\} and Kim, \{K. H.\}",

year = "2005",

doi = "10.1149/1.2096362",

language = "English",

volume = "8",

pages = "H103--H105",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "12",

}

TY - JOUR

T1 - Magnetic field shape effect on electrical properties of TOLEDs in the deposition of ITO top cathode layer

AU - Kim, Han Ki

AU - Lee, Kyu Sung

AU - Keum, M. J.

AU - Kim, K. H.

PY - 2005

Y1 - 2005

N2 - The effects of magnetic field shape between indium tin oxide (ITO) targets on electrical characteristics of top-emission organic light emitting diodes (TOLEDs) have been investigated. When the top electrode is prepared with ITO using facing target sputtering (FTS) method, it was found that TOLEDs with ITO layers prepared in the diffused plasma mode showed much lower leakage current density (1 × 10-5 mA/cm2 at -6 V) than (1 × 10-1 mA/cm2 at -6 V) of TOLEDs prepared with ITO in the concentrated mode. Even when the ITO film itself had the identical electrical, optical, and structural properties, TOLEDs clearly exhibited different electrical properties based on the plasma mode at which the ITO film was sputtered. This suggests that there is less plasma damage from the bombardment of energetic particles in a diffused plasma mode than in a concentrated plasma mode during the FTS process.

AB - The effects of magnetic field shape between indium tin oxide (ITO) targets on electrical characteristics of top-emission organic light emitting diodes (TOLEDs) have been investigated. When the top electrode is prepared with ITO using facing target sputtering (FTS) method, it was found that TOLEDs with ITO layers prepared in the diffused plasma mode showed much lower leakage current density (1 × 10-5 mA/cm2 at -6 V) than (1 × 10-1 mA/cm2 at -6 V) of TOLEDs prepared with ITO in the concentrated mode. Even when the ITO film itself had the identical electrical, optical, and structural properties, TOLEDs clearly exhibited different electrical properties based on the plasma mode at which the ITO film was sputtered. This suggests that there is less plasma damage from the bombardment of energetic particles in a diffused plasma mode than in a concentrated plasma mode during the FTS process.

UR - https://www.scopus.com/pages/publications/28044440662

U2 - 10.1149/1.2096362

DO - 10.1149/1.2096362

M3 - Article

AN - SCOPUS:28044440662

SN - 1099-0062

VL - 8

SP - H103-H105

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Magnetic field shape effect on electrical properties of TOLEDs in the deposition of ITO top cathode layer

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this