Low temperature synthesis of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

Young Chul Choi; Dong Jae Bae; Young Hee Lee; Byung Soo Lee; In Taek Han; Won Bong Choi; Nae Sung Lee; Jong Min Kim

doi:10.1016/S0379-6779(99)00285-4

Low temperature synthesis of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

Young Chul Choi, Dong Jae Bae, Young Hee Lee, Byung Soo Lee, In Taek Han, Won Bong Choi, Nae Sung Lee, Jong Min Kim

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

We have synthesized pure carbon nanotubes at very low temperature using microwave plasma-enhanced chemical vapor deposition (MPECVD) with methane/hydrogen gas. Ratio of a gas mixture (CH₄/H₂) and deposition time at a substrate temperature below 520 °C are optimized. Pure and dense carbon nanotubes are grown uniformly over a large area of Ni-coated silicon substrates without any pretreatment of substrates. The diameters and lengths of carbon nanotubes could be controlled by changing the ratio of gas mixture and the growth time. Raman spectrum clearly shows the peak at 1592 cm^-1 (G-band), indicating the formation of graphitized carbon nanotubes.

Original language	English
Pages (from-to)	159-163
Number of pages	5
Journal	Synthetic Metals
Volume	108
Issue number	2
DOIs	https://doi.org/10.1016/S0379-6779(99)00285-4
State	Published - 17 Jan 2000
Externally published	Yes

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title = "Low temperature synthesis of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition",

abstract = "We have synthesized pure carbon nanotubes at very low temperature using microwave plasma-enhanced chemical vapor deposition (MPECVD) with methane/hydrogen gas. Ratio of a gas mixture (CH4/H2) and deposition time at a substrate temperature below 520 °C are optimized. Pure and dense carbon nanotubes are grown uniformly over a large area of Ni-coated silicon substrates without any pretreatment of substrates. The diameters and lengths of carbon nanotubes could be controlled by changing the ratio of gas mixture and the growth time. Raman spectrum clearly shows the peak at 1592 cm-1 (G-band), indicating the formation of graphitized carbon nanotubes.",

author = "Choi, \{Young Chul\} and Bae, \{Dong Jae\} and Lee, \{Young Hee\} and Lee, \{Byung Soo\} and Han, \{In Taek\} and Choi, \{Won Bong\} and Lee, \{Nae Sung\} and Kim, \{Jong Min\}",

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T1 - Low temperature synthesis of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

AU - Choi, Young Chul

AU - Bae, Dong Jae

AU - Lee, Young Hee

AU - Lee, Byung Soo

AU - Han, In Taek

AU - Choi, Won Bong

AU - Lee, Nae Sung

AU - Kim, Jong Min

PY - 2000/1/17

Y1 - 2000/1/17

N2 - We have synthesized pure carbon nanotubes at very low temperature using microwave plasma-enhanced chemical vapor deposition (MPECVD) with methane/hydrogen gas. Ratio of a gas mixture (CH4/H2) and deposition time at a substrate temperature below 520 °C are optimized. Pure and dense carbon nanotubes are grown uniformly over a large area of Ni-coated silicon substrates without any pretreatment of substrates. The diameters and lengths of carbon nanotubes could be controlled by changing the ratio of gas mixture and the growth time. Raman spectrum clearly shows the peak at 1592 cm-1 (G-band), indicating the formation of graphitized carbon nanotubes.

AB - We have synthesized pure carbon nanotubes at very low temperature using microwave plasma-enhanced chemical vapor deposition (MPECVD) with methane/hydrogen gas. Ratio of a gas mixture (CH4/H2) and deposition time at a substrate temperature below 520 °C are optimized. Pure and dense carbon nanotubes are grown uniformly over a large area of Ni-coated silicon substrates without any pretreatment of substrates. The diameters and lengths of carbon nanotubes could be controlled by changing the ratio of gas mixture and the growth time. Raman spectrum clearly shows the peak at 1592 cm-1 (G-band), indicating the formation of graphitized carbon nanotubes.

UR - https://www.scopus.com/pages/publications/0033902870

U2 - 10.1016/S0379-6779(99)00285-4

DO - 10.1016/S0379-6779(99)00285-4

M3 - Article

AN - SCOPUS:0033902870

SN - 0379-6779

VL - 108

SP - 159

EP - 163

JO - Synthetic Metals

JF - Synthetic Metals

IS - 2

ER -

Low temperature synthesis of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

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