Low-temperature solution-processed amorphous indium tin oxide field-effect transistors

Sung Kim Hyun; Myung Gil Kim; Young Geun Ha; Mercouri G. Kanatzidis; Tobin J. Marks; Antonio Facchetti

doi:10.1021/ja903886r

Low-temperature solution-processed amorphous indium tin oxide field-effect transistors

Sung Kim Hyun, Myung Gil Kim, Young Geun Ha, Mercouri G. Kanatzidis, Tobin J. Marks, Antonio Facchetti

Northwestern University

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

(Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO₂ and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl₃ and SnCl₄ as the sources of In³⁺ and Sn⁴⁺, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures T_a < 250°C and afford devices with excellent electrical characteristics. The optimized [In³⁺]/[In³⁺ + Sn⁴⁺] molar ratio (0.7) and annealing temperature (T_a = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm² V ^-1 s^-1 with SiO₂ and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm² V^-1 s^-1, which is encouraging for processing on plastic substrates.

Original language	English
Pages (from-to)	10826-10827
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	131
Issue number	31
DOIs	https://doi.org/10.1021/ja903886r
State	Published - 12 Aug 2009
Externally published	Yes

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10.1021/ja903886r

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@article{354c6eafdeb54690919c3e7af7fb65a2,

title = "Low-temperature solution-processed amorphous indium tin oxide field-effect transistors",

abstract = "(Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta < 250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.",

author = "Hyun, \{Sung Kim\} and Kim, \{Myung Gil\} and Ha, \{Young Geun\} and Kanatzidis, \{Mercouri G.\} and Marks, \{Tobin J.\} and Antonio Facchetti",

year = "2009",

month = aug,

day = "12",

doi = "10.1021/ja903886r",

language = "English",

volume = "131",

pages = "10826--10827",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "31",

}

TY - JOUR

T1 - Low-temperature solution-processed amorphous indium tin oxide field-effect transistors

AU - Hyun, Sung Kim

AU - Kim, Myung Gil

AU - Ha, Young Geun

AU - Kanatzidis, Mercouri G.

AU - Marks, Tobin J.

AU - Facchetti, Antonio

PY - 2009/8/12

Y1 - 2009/8/12

N2 - (Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta < 250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.

AB - (Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta < 250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.

UR - https://www.scopus.com/pages/publications/68249152001

U2 - 10.1021/ja903886r

DO - 10.1021/ja903886r

M3 - Article

AN - SCOPUS:68249152001

SN - 0002-7863

VL - 131

SP - 10826

EP - 10827

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 31

ER -

Low-temperature solution-processed amorphous indium tin oxide field-effect transistors

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