Low temperature silicon nitride thin films for moisture barrier layers by a PECVD process

  • Sun Jung Kim
  • , Sang Heon Yong
  • , Hyung June Ann
  • , Satoko Gatineau
  • , Heeyeop Chae

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Low temperature silicon nitride thin films were deposited by a plasma enhanced chemical vapor deposition (PECVD) process for moisture barrier layers. Inorganic thin films was fabricated in various process conditions. In this research, Water vapor transmission rate (WVTR) of below 10-2g/m2-day was achieved.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages1760-1761
Number of pages2
ISBN (Electronic)9781510845503
StatePublished - 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 9 Dec 201511 Dec 2015

Publication series

NameProceedings of the International Display Workshops
Volume3
ISSN (Print)1883-2490

Conference

Conference22nd International Display Workshops, IDW 2015
Country/TerritoryJapan
CityOtsu
Period9/12/1511/12/15

Keywords

  • Chemical vapor deposition (CVD)
  • Encapsulation
  • Plasma enhanced CVD
  • Silicon nitride

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