Low temperature growth of ZnO thin film by metalorganic chemical vapor deposition

Chan Kim Dong; Hyun Kong Bo; Koun Cho Hyung; Yong Lee Jeong; Jun Park Dong

doi:10.1002/pssb.200675121

Low temperature growth of ZnO thin film by metalorganic chemical vapor deposition

Chan Kim Dong
, Hyun Kong Bo
, Koun Cho Hyung
, Yong Lee Jeong
, Jun Park Dong

Department of Advanced Materials Science and Engineering

Sungkyunkwan University
Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Polycrystalline ZnO thin films with a preferred orientation were successfully grown by metal organic chemical vapor deposition at temperatures ≤300 °C. By injecting additional Ar gas through a by-pass line, good quality ZnO films were grown at low temperature. The ZnO films grown at substrate temperatures <200 °C showed a porous microstructure whereas a dense undoped ZnO film showing a high conductivity and no Zn phases was grown at 210 °C. The ZnO film grown at low temperatures by MOCVD showed improved emission properties compared with the films grown by sputtering.

Original language	English
Pages (from-to)	1512-1516
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	244
Issue number	5
DOIs	https://doi.org/10.1002/pssb.200675121
State	Published - May 2007

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title = "Low temperature growth of ZnO thin film by metalorganic chemical vapor deposition",

abstract = "Polycrystalline ZnO thin films with a preferred orientation were successfully grown by metal organic chemical vapor deposition at temperatures ≤300 °C. By injecting additional Ar gas through a by-pass line, good quality ZnO films were grown at low temperature. The ZnO films grown at substrate temperatures <200 °C showed a porous microstructure whereas a dense undoped ZnO film showing a high conductivity and no Zn phases was grown at 210 °C. The ZnO film grown at low temperatures by MOCVD showed improved emission properties compared with the films grown by sputtering.",

author = "Dong, \{Chan Kim\} and Bo, \{Hyun Kong\} and Hyung, \{Koun Cho\} and Jeong, \{Yong Lee\} and Dong, \{Jun Park\}",

year = "2007",

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language = "English",

volume = "244",

pages = "1512--1516",

journal = "Physica Status Solidi (B) Basic Research",

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T1 - Low temperature growth of ZnO thin film by metalorganic chemical vapor deposition

AU - Dong, Chan Kim

AU - Bo, Hyun Kong

AU - Hyung, Koun Cho

AU - Jeong, Yong Lee

AU - Dong, Jun Park

PY - 2007/5

Y1 - 2007/5

N2 - Polycrystalline ZnO thin films with a preferred orientation were successfully grown by metal organic chemical vapor deposition at temperatures ≤300 °C. By injecting additional Ar gas through a by-pass line, good quality ZnO films were grown at low temperature. The ZnO films grown at substrate temperatures <200 °C showed a porous microstructure whereas a dense undoped ZnO film showing a high conductivity and no Zn phases was grown at 210 °C. The ZnO film grown at low temperatures by MOCVD showed improved emission properties compared with the films grown by sputtering.

AB - Polycrystalline ZnO thin films with a preferred orientation were successfully grown by metal organic chemical vapor deposition at temperatures ≤300 °C. By injecting additional Ar gas through a by-pass line, good quality ZnO films were grown at low temperature. The ZnO films grown at substrate temperatures <200 °C showed a porous microstructure whereas a dense undoped ZnO film showing a high conductivity and no Zn phases was grown at 210 °C. The ZnO film grown at low temperatures by MOCVD showed improved emission properties compared with the films grown by sputtering.

UR - https://www.scopus.com/pages/publications/34249086802

U2 - 10.1002/pssb.200675121

DO - 10.1002/pssb.200675121

M3 - Article

AN - SCOPUS:34249086802

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EP - 1516

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 5

ER -

Low temperature growth of ZnO thin film by metalorganic chemical vapor deposition

Abstract

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