Abstract
Polycrystalline ZnO thin films with a preferred orientation were successfully grown by metal organic chemical vapor deposition at temperatures ≤300 °C. By injecting additional Ar gas through a by-pass line, good quality ZnO films were grown at low temperature. The ZnO films grown at substrate temperatures <200 °C showed a porous microstructure whereas a dense undoped ZnO film showing a high conductivity and no Zn phases was grown at 210 °C. The ZnO film grown at low temperatures by MOCVD showed improved emission properties compared with the films grown by sputtering.
| Original language | English |
|---|---|
| Pages (from-to) | 1512-1516 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 244 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2007 |