Low temperature fabrication and physical properties of 5 at.% Ga-doped ZnO films for transparent electrode applications

Young Hun Kang; Choon Gi Choi; Sung Yool Choi; Eunkyoung Nam; Donggeun Jung; Jin Hyo Boo; Jeong Won Kim; Ji Hong Jung; Jae Sang Cha; Young Sung Kim

doi:10.1142/S1793604710001032

Low temperature fabrication and physical properties of 5 at.% Ga-doped ZnO films for transparent electrode applications

Young Hun Kang
, Choon Gi Choi
, Sung Yool Choi
, Eunkyoung Nam
, Donggeun Jung
, Jin Hyo Boo
, Jeong Won Kim
, Ji Hong Jung
, Jae Sang Cha
, Young Sung Kim

Department of Chemistry

LG Corporation
Electronics and Telecommunications Research Institute
Sungkyunkwan University
Korea Research Institute of Standards and Science
Daejeon University
Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Transparent conductive 5 at.% Ga-doped ZnO (GZO) thin films are deposited on a glass substrate by an asymmetrical bipolar-pulsed DC magnetron sputtering at various substrate temperatures. All the GZO films have nanocrystalline structure and compact surface morphology. A highly c-axis oriented GZO film was grown perpendicular to the substrate at the 200C. The measured work function of GZO film deposited at 200°C shows slightly lower value of 4.37 eV than a commercial ITO film of 4.6 eV. The GZO film showed the lowest sheet resistance of 35 Ω/□, a carrier concentration of 1.2 ×10²¹ cm^-3, a mobility of 9.9 cm²/Vs, and high optical transmittance of over 85% in the visible range. It indicates that the GZO films at 200°C can be promising as an alternative to ITO thin film for transparent electrode applications.

Original language	English
Pages (from-to)	101-105
Number of pages	5
Journal	Functional Materials Letters
Volume	3
Issue number	2
DOIs	https://doi.org/10.1142/S1793604710001032
State	Published - Jun 2010

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Ga-doped ZnO (GZO)
optical property
sputtering
transparent conductive oxide

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10.1142/S1793604710001032

Cite this

@article{6d75dc1cc38e4b4baa0368dbc11f746d,

title = "Low temperature fabrication and physical properties of 5 at.\% Ga-doped ZnO films for transparent electrode applications",

abstract = "Transparent conductive 5 at.\% Ga-doped ZnO (GZO) thin films are deposited on a glass substrate by an asymmetrical bipolar-pulsed DC magnetron sputtering at various substrate temperatures. All the GZO films have nanocrystalline structure and compact surface morphology. A highly c-axis oriented GZO film was grown perpendicular to the substrate at the 200C. The measured work function of GZO film deposited at 200°C shows slightly lower value of 4.37 eV than a commercial ITO film of 4.6 eV. The GZO film showed the lowest sheet resistance of 35 Ω/□, a carrier concentration of 1.2 ×1021 cm-3, a mobility of 9.9 cm2/Vs, and high optical transmittance of over 85\% in the visible range. It indicates that the GZO films at 200°C can be promising as an alternative to ITO thin film for transparent electrode applications.",

keywords = "Ga-doped ZnO (GZO), optical property, sputtering, transparent conductive oxide",

author = "Kang, \{Young Hun\} and Choi, \{Choon Gi\} and Choi, \{Sung Yool\} and Eunkyoung Nam and Donggeun Jung and Boo, \{Jin Hyo\} and Kim, \{Jeong Won\} and Jung, \{Ji Hong\} and Cha, \{Jae Sang\} and Kim, \{Young Sung\}",

year = "2010",

month = jun,

doi = "10.1142/S1793604710001032",

language = "English",

volume = "3",

pages = "101--105",

journal = "Functional Materials Letters",

issn = "1793-6047",

publisher = "World Scientific",

number = "2",

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TY - JOUR

T1 - Low temperature fabrication and physical properties of 5 at.% Ga-doped ZnO films for transparent electrode applications

AU - Kang, Young Hun

AU - Choi, Choon Gi

AU - Choi, Sung Yool

AU - Nam, Eunkyoung

AU - Jung, Donggeun

AU - Boo, Jin Hyo

AU - Kim, Jeong Won

AU - Jung, Ji Hong

AU - Cha, Jae Sang

AU - Kim, Young Sung

PY - 2010/6

Y1 - 2010/6

N2 - Transparent conductive 5 at.% Ga-doped ZnO (GZO) thin films are deposited on a glass substrate by an asymmetrical bipolar-pulsed DC magnetron sputtering at various substrate temperatures. All the GZO films have nanocrystalline structure and compact surface morphology. A highly c-axis oriented GZO film was grown perpendicular to the substrate at the 200C. The measured work function of GZO film deposited at 200°C shows slightly lower value of 4.37 eV than a commercial ITO film of 4.6 eV. The GZO film showed the lowest sheet resistance of 35 Ω/□, a carrier concentration of 1.2 ×1021 cm-3, a mobility of 9.9 cm2/Vs, and high optical transmittance of over 85% in the visible range. It indicates that the GZO films at 200°C can be promising as an alternative to ITO thin film for transparent electrode applications.

AB - Transparent conductive 5 at.% Ga-doped ZnO (GZO) thin films are deposited on a glass substrate by an asymmetrical bipolar-pulsed DC magnetron sputtering at various substrate temperatures. All the GZO films have nanocrystalline structure and compact surface morphology. A highly c-axis oriented GZO film was grown perpendicular to the substrate at the 200C. The measured work function of GZO film deposited at 200°C shows slightly lower value of 4.37 eV than a commercial ITO film of 4.6 eV. The GZO film showed the lowest sheet resistance of 35 Ω/□, a carrier concentration of 1.2 ×1021 cm-3, a mobility of 9.9 cm2/Vs, and high optical transmittance of over 85% in the visible range. It indicates that the GZO films at 200°C can be promising as an alternative to ITO thin film for transparent electrode applications.

KW - Ga-doped ZnO (GZO)

KW - optical property

KW - sputtering

KW - transparent conductive oxide

UR - https://www.scopus.com/pages/publications/77958524402

U2 - 10.1142/S1793604710001032

DO - 10.1142/S1793604710001032

M3 - Article

AN - SCOPUS:77958524402

SN - 1793-6047

VL - 3

SP - 101

EP - 105

JO - Functional Materials Letters

JF - Functional Materials Letters

IS - 2

ER -

Low temperature fabrication and physical properties of 5 at.% Ga-doped ZnO films for transparent electrode applications

Abstract

UN SDGs

Keywords

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